SDH02

SDH02 Absolute maximum ratings Symbol VCBO VCEO VEBO IC ICP IB IF IFSM VR PT Tj Tstg Ratings 120 100 6 1.5 NPN Darlington With built-in flywheel diode (Ta=25°C) External dimensions E SD Electrical characteristics Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) ton tstg tf fT Cob 100 2000 6000 1.1 1.7 0.5 4.5 1.2 50 20 12000 1.3 2.2 V V Specification min typ max 10 3 Unit (Ta=25°C) Unit V V V A A A A A V W °C °C Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA VCC 30V, IC=1A, IB1=–IB2=2mA VCE=12V, IE=–0.1A VCB=10V, f=1MHz (Ta=25°C) µA mA V 2.5 (PW≤1ms, Du≤10%) 0.2 1.5 2.5 (PW≤0.5ms, Du≤10%) 120 3 (Ta=25°C) 150 –40 to +150 µs µs µs MHz pF sEquivalent circuit diagram 16 15 1 14 13 12 11 10 9 qDiode for flyback voltage absorption Symbol VR VF Specification min typ max 120 1.6 10 100 Unit V V IR=10µA IF=1A Conditions 3 5 7 IR 8 µA ns VR=120V IF=±100mA R1 R2 4 2 R1: 2.5kΩ typ R2: 200Ω typ 6 trr Characteristic curves IC-VCE Characteristics (Typical) 2.5 IB=10mA 4m A hFE-IC Characteristics (Typical) 10000 hFE-IC Temperature Characteristics (Typical) 10000 5000 =1 25 °C 75 °C (VCE=4V) typ (VCE=4V) 2m A 1.2 mA 0.6m A 5000 A 2.0 0.4m 0.3mA Ta 25 °C 0° C IC (A) 1.5 hFE –3 1000 hFE 0.1 0.5 1 2.5 1000 500 1.0 500 0.5 0 1 2 3 4 5 6 100 0.03 0.05 100 0.03 0.05 0.1 0.5 1 2.5 VCE (V) IC (A) IC (A) VCE(sat)-IC Temperature Characteristics (Typical) 3 VCE(sat)-IB Characteristics (Typical) 3 IC-VBE Temperature Characterist...