N-channel With built-in flywheel diode
SDK02
Absolute maximum ratings
Symbol VDSS VGSS ID ID(pulse) IF IFSM VR PT Tch Tstg Ratings 60 ±10 ±2
N-channel With bu...
Description
SDK02
Absolute maximum ratings
Symbol VDSS VGSS ID ID(pulse) IF IFSM VR PT Tch Tstg Ratings 60 ±10 ±2
N-channel With built-in flywheel diode
(Ta=25°C)
External dimensions E
SD
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss VSD trr 1.0 1.2 0.19 0.25 400 160 35 1.0 150 1.5 0.24 0.30 Specification min typ max 60 ±500 250 2.0 Unit V nA
(Ta=25°C)
Unit V V A A A A V W °C °C
Conditions ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=1.0A VGS=10V, ID=1.0A VGS=4V, ID=1.0A VDS=25V, f=1.0MHz, VGS=0V ISD=2A, VGS=0V ISD=±100mA
µA
V S Ω Ω pF pF pF V ns
±3 (PW≤100µs, Du≤1%) 1.5 2.5 (PW≤0.5ms, Du≤10%) 120 3 (Ta=25°C, 4-circuit operation) 150 –40 to +150
sEquivalent circuit diagram
16 15 14 13 12 11 10 9
qDiode for flyback voltage absorption
Symbol VR min 120 1.6 100 100 Specification typ max Unit V V Ω ns Conditions IR=10µA IF=1A VR=120V IF=±100mA
1
3
5
7
VF IR
2
4
6
8
trr
Characteristic curves
170
...
Similar Datasheet