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SDMP0340LCT Dataheets PDF



Part Number SDMP0340LCT
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE
Datasheet SDMP0340LCT DatasheetSDMP0340LCT Datasheet (PDF)

SDMP0340LT /LST /LCT /LAT SURFACE MOUNT SCHOTTKY BARRIER DIODE Features NEW PRODUCT · · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOT-523 Dim A C TOP VIEW E G H K M B C Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8° Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ¾ A B C D G H J N Mechanical Data · · · · · · · · .

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SDMP0340LT /LST /LCT /LAT SURFACE MOUNT SCHOTTKY BARRIER DIODE Features NEW PRODUCT · · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOT-523 Dim A C TOP VIEW E G H K M B C Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8° Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ¾ A B C D G H J N Mechanical Data · · · · · · · · Case: SOT-523, Molded Plastic Case Material UL Flammability Rating: 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Marking: See Diagrams Below & Page 3 Weight: 0.002 grams (approx.) Ordering Information, see Page 3 B K L M N a J D L All Dimensions in mm SDMP0340LT Marking: SM SDMP0340LAT Marking: SQ SDMP0340LCT Marking: SP SDMP0340LST Marking: SN Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Non-Repetitive Peak Forward Surge Current @8.3ms Single half sine-wave superimposed on rated load (JEDEDC method) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IFM IFSM Pd RqJA Tj, TSTG Value 40 28 30 200 150 833 -40 to +125 Unit V V mA mA mW °C/W °C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 2) Forward Voltage Drop (Note 2) Leakage Current (Note 2) Total Capacitance @ TA = 25°C unless otherwise specified Symbol V(BR)R VF IR CT Min 40 ¾ ¾ ¾ Typ ¾ 290 ¾ 2 Max ¾ 370 1.0 ¾ Unit V mV mA pF Test Condition IR = 10uA IF = 1mA VR = 10V VR = 1V, f = 1.0 MHz Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. DS30266 Rev. 3 - 2 1 of 3 SDMP0340LT /LST /LCT /LAT 250 IF, INSTANTANEOUS FORWARD CURRENT (A) 1 NEW PRODUCT (see Note 1) Pd, POWER DISSIPATION (mW) 200 100m 10m TA = +75ºC TA = +125ºC 150 1m TA = +25ºC 100 50 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics CT, CAPACITANCE BETWEEN TERMINALS (pF) 100 IR, INSTANTANEOUS REVERSE CURRENT (A) TA = +125ºC TA = 75ºC 10 100n TA = 25ºC 1 10n TA = -25ºC 1n 0 5 10 15 20 25 30 35 0.1 0 5 10 15 20 25 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance Between Terminals Characteristics 10 trr, REVERSE RECOVERY TIME (ns) 5 2 1 0.5 0.2 0.1 0 4 8 12 16 20 24 28 IF, FORWARD CURRENT (mA) Fig. 5 Typical Reverse Recovery Time Characteristics DS.


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