TVS Diode
Semiconductor
SDT05SF
TVS Diode
Features
• Transient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(con...
Description
Semiconductor
SDT05SF
TVS Diode
Features
Transient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(contact ) Small package for use in portable electronics Low operating and clamping voltage
Applications
Cellular Handsets and Accessories Microprocessor based equipment Notebooks, Desktops and Servers
Ordering Information
Type NO. SDT05SF Marking S05 Package Code SOT-23F
Outline Dimensions
unit :
mm
2.4±0.1 1.6±0.1
3
1
2.9±0.1 1.90 BSC
3
0.4±0.05
2
0.15±0.05
1
2
KSD-T054-000
0.9±0.1
PIN Connections 1. Cathode 2. Cathode 3. Anode
0~0.1
1
SDT05SF
Absolute maximum ratings
Characteristic
Peak pulse power ( tp = 8/20 ㎲ ) Peak pulse current (tp = 8/20 ㎲ ) Lead soldering temperature Operating temperature Storage temperature
Ta=25°C
Symbol
PPK IPP TL TJ Tstg
Ratings
300 17 260 (10sec. ) -55 ~ 125 -55 ~ 150
Unit
W A °C °C °C
Electrical Characteristics
Characteristic
Reverse stand-off voltage Reverse breakdown voltage Reverse leakage current Clamping voltage Junction capacitance Junction capacitance
Ta=25°C
Symbol
VRWM VBR IR VC CJ CJ It=1mA
Test Condition
Min. Typ. Max.
5 6 20 9.8 350 400
Unit
V V ㎂ V pF pF
VRWM=5V , T=25℃ IPP=1A, tp=8/20 ㎲ Pin 1 to 2 VR=0V, f=1MHz Pin 1 to 3 and Pin 2 to 3 VR=0V, f=1MHz
KSD-T054-000
2
Electrical Characteristics Curves
Fig. 1 Power derating curve
SDT05SF
Fig. 2 None-repetitive peak pulse power vs pulse time
Fig. 3 Pulse Waveform
KSD-T054-000
3
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