Document
SEMB4
PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor ( R1 =10kΩ)
C1 6 B2 5 E2 4
4 5 3 6 1 2
R1 TR1
R1 TR2
1 E1
2 B1
3 C2
EHA07266
Type SEMB4
Maximum Ratings Parameter
Marking WW
Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg
Value
Unit
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation , TS = 75 °C Junction temperature Storage temperature Thermal Resistance
50 50 5 20 100 250 150 -65 ... 150
V
mA mW °C
Junction - soldering point1)
RthJS
≤ 300
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor
AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 1.2 fT 150 -
Unit max. 100 630 0.3 1 1.1 13 kΩ
MHz pF
typ. 10
V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE VCEsat Vi(off) Vi(on) R1
50 50 5 120 0.4 0.5 7
V
nA V
1) Pulse test: t < 300µs; D < 2%
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DC Current Gain hFE = f (I C)
Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration)
10 3
VCEsat = f (IC), hFE = 20
10 2
mA
hFE
10 1
10 2
IC
10 0 10 1 -1 10
0 1
10
10
mA
10
2
10
-1
0
0.1
0.2
0.3
V
0.5
IC
VCEsat
Input on Voltage Vi(on) = f (IC )
Input off voltage Vi(off) = f (IC )
VCE = 0.3V (common emitter configuration)
10 2
VCE = 5V (common emitter configuration)
10 2
mA
mA
10 1
10 1
IC
IC
10 0 10 -1 -1 10
0 1
10 0
10
-1
10
-2
10
10
V
10
2
10
-3
0
1
2
3
4
V
6
Vi(on)
Vi(off)
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Total power dissipation P tot = f (TS)
300
mW
Ptot
200
150
100
50
0 0
15
30
45
60
75
90 105 120 °C
150
TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
10 2
Ptotmax/ PtotDC
RthJS
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 -1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
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