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SEMB9 Dataheets PDF



Part Number SEMB9
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description PNP Silicon Digital Transistor Array Preliminary data
Datasheet SEMB9 DatasheetSEMB9 Datasheet (PDF)

SEMB9 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor (R1=10kΩ, R2 =47kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type SEMB9 Maximum Ratings Parameter Marking WN Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value 50 5.

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SEMB9 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor (R1=10kΩ, R2 =47kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type SEMB9 Maximum Ratings Parameter Marking WN Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value 50 50 6 20 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation , TS = 75 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) mA mW °C RthJS ≤ 300 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-25-2004 SEMB9 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 6 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 7 0.19 10 0.21 13 0.24 Vi(on) 0.5 1.4 Vi(off) 0.5 1 VCEsat 0.3 hFE 70 IEBO 167 ICBO 100 V(BR)EBO V(BR)CEO V(BR)CBO 50 50 typ. max. Unit V nA µA V kΩ - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 200 MHz 1) Pulse test: t < 300µs; D < 2% 2 Feb-25-2004 SEMB9 DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) 10 3 VCEsat = f (IC), hFE = 20 10 2 mA hFE 10 2 IC 10 1 10 1 10 0 -1 10 0 1 10 10 mA 10 2 10 0 0 0.2 0.4 0.6 V 1 IC VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC ) VCE = 0.3V (common emitter configuration) 10 2 VCE = 5V (common emitter configuration) 10 1 mA mA 10 0 10 1 IC IC 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 V 10 2 10 -3 0 0.5 1 V 2 Vi(on) Vi(off) 3 Feb-25-2004 SEMB9 Total power dissipation P tot = f (TS) 300 mW Ptot 200 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 10 2 Ptotmax/ PtotDC RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Feb-25-2004 .


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