SEMD48
NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, drive...
SEMD48
NPN/
PNP Silicon Digital
Transistor Array Preliminary data Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated
NPN/
PNP Transistors in one package Built in bias resistor
NPN: R1 = 47kΩ, R2 = 47kΩ
PNP: R1= 2.2kΩ, R2 = 47kΩ Tape loading orientation
Top View
3 2 1
4 5 3 6 1 2
C1 6
B2 5
E2 4
Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side
R2 R1 TR1 R2 1 E1 2 B1 3 C2
EHA07176
TR2 R1
4 5 6
Direction of Unreeling
Type SEMD48
Maximum Ratings Parameter
Collector-emitter voltage Collector-base voltage Emitter-base voltage Emitter-base voltage Input on voltage Input on voltage DC collector current DC collector current Junction temperature Storage temperature
NPN PNP NPN PNP NPN PNP
Total power dissipation, TS = 75 °C
WR
Marking WT
Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Symbol VCEO VCBO VEBO VEBO Vi(on) Vi(on) IC IC Ptot Tj Tstg
Value 50 50 10 5 50 10 70 100 250 150 -65...+150
Unit V
mA mW °C
1
Feb-26-2004
SEMD48
Thermal Resistance
Junction - soldering point1)
RthJS
≤ 300
K/W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics for
NPN Type Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 2) IC = 5 mA, VCE = 5 V...