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SF0R5G43

Toshiba Semiconductor

THYRISTOR

SF0R5G43,SF0R5J43 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF0R5G43,SF0R5J43 LOW POWER SWITCHING AND CONTROL APPLICATIONS ...


Toshiba Semiconductor

SF0R5G43

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SF0R5G43,SF0R5J43 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF0R5G43,SF0R5J43 LOW POWER SWITCHING AND CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : VRRM = 400,600V l Average On−State Current l Plastic Mold Type. : IT (AV) = 500mA Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage (RGK = 1kΩ) Non−Repetitive Peak Reverse Voltage (Non-Repetitive < 5ms, RGK = 1kΩ, Tj = 0~110°C) SF0R5G43 SF0R5J43 SF0R5G43 SF0R5J43 VRSM VDRM VRRM SYMBOL RATING 400 600 500 720 V V UNIT Average On−State Current (Half Sine Waveform Tc = 30°C) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 IT (AV) IT (RMS) ITSM I t PGM PG (AV) VFGM VRGM IGM Tj Tstg 2 500 800 7 (50Hz) 8 (60Hz) 0.25 1 0.01 8 −5 500 −65~125 −65~125 mA mA A A s W W V V mA °C °C 2 JEDEC JEITA TOSHIBA Weight: 0.2g TO−92 SC−43 13−5A1D Note: Should be used with gate resistance as follows. 1 2001-07-10 SF0R5G43,SF0R5J43 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Holding Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT...




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