SF25JZ51

SF25GZ51,SF25JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF25GZ51,SF25JZ51 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600 V Repetitive Peak Reverse Voltage : VRRM = 400, 600 V l Average On−State Current l Isolation Voltage : IT (AV) = 25 A : VIsol = 1500 V AC Unit in mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non−Repetitive < 5 ms, Tj = 0~125°C) Average On−State Current (Half Sine Waveform) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1 min.) 2 SYMBOL VDRM VRRM RATING 400 UNIT SF25GZ51 SF25JZ51 SF25GZ51 V 600 500 VRSM SF25JZ51 IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg VIsol 2 V 720 25 39 350 (50 Hz) 385 (60 Hz) 612 100 5 0.5 10 -5 2 -40~125 -40~125 1500 A A A A s A / µs W W V V A °C °C V 2 JEDEC EIAJ TOSHIBA Weight : 5.9g ― ― 13−16A1B Note : di / dt Test Condition, iG = 30mA, tgw = 10µs, tgr ≤ 250ns 1 2001-05-10 SF25GZ51,SF25JZ51 ELECTRICAL CHARACTERISTICS (Ta CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigg...