DatasheetsPDF.com

SF8G41A

Toshiba Semiconductor

MEDIUM POWER CONTROL APPLICATIONS

SF8G41A,SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A,SF8J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm l Re...


Toshiba Semiconductor

SF8G41A

File Download Download SF8G41A Datasheet


Description
SF8G41A,SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A,SF8J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current l Gate Trigger Current : IT (AV) = 8A : IGT = 15mA (MAX.) MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non−Repetitive<5ms, Tj = 0~125°C) SF8G41A SF8J41A SF8G41A VRSM SF8J41A IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg 2 SYMBOL VDRM VRRM RATING 400 UNIT V 600 500 V 720 8 12.6 120 (50Hz) 132 (60Hz) 72 100 5 0.5 10 −5 2 −40~125 −40~125 A A A A s A / µs W W V V A °C °C 2 Average On−State Current (Half Sine Waveform Tc = 83°C) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Curret Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 JEDEC JEITA TOSHIBA Weight: 2g TO−220AB ― 13−10G1B 1 2001-07-13 SF8G41A,SF8J41A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Critical Rate of Rise of Off−State Voltage Holding Current Latching Current Thermal...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)