SFF9250L

www.DataSheet4U.com Advanced Power MOSFET FEATURES ❑ Logic-Level Gate Drive ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : 10uA (Max.) @ VDS=-200V ❑ Lower RDS(ON) : 0.175 Ω (Typ.) SFF9250L BVDSS = -200 V RDS(on) = 0.23 Ω ID = -12.6 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 °C) Continuous Drain Current (TC=100 °C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 °C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5-seconds ② ① ① ③ ① Value -200 -12.6 -7.9 -50.4 ±20 990 -12.6 20.4 -5.0 90 0.72 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ °C °C 300 Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 0.61 40 °C /W Units Rev. A www.DataSheet4U.com SFF9250L Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Ga...