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SFH9240 Dataheets PDF



Part Number SFH9240
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet SFH9240 DatasheetSFH9240 Datasheet (PDF)

Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V ! Lower RDS(ON) : 0.344 Ω (Typ.) SFH9240 BVDSS = -200 V RDS(on) = 0.5 Ω ID = -11 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=.

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Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V ! Lower RDS(ON) : 0.344 Ω (Typ.) SFH9240 BVDSS = -200 V RDS(on) = 0.5 Ω ID = -11 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 ” from case for 5-seconds o o o Value -200 -11 -7.7 1 O Units V A A V mJ A mJ V/ns W W/ C o -44 + _ 30 807 -11 12.6 -5.0 126 1.0 - 55 to +150 O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 1.0 -40 o Units C/W Rev. A SFH9240 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller “ ) Charge Min. Typ. Max. Units -200 --2.0 ------------------0.16 ------6.5 207 81 16 23 54 19 46 9.2 22.9 ---4.0 -100 100 -10 -100 0.5 -310 120 40 55 115 50 59 --nC ns µA Ω S pF V o P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-200V VDS=-160V,TC=125 C VGS=-10V,ID=-5.5A VDS=-40V,ID=-5.5A 4 O 4 O o V/ C ID=-250µA V nA 1220 1585 VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-11A, RG=9.1Ω See Fig 13 4 O 5 O VDS=-160V,VGS=-10V, ID=-11A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------180 1.24 -11 -44 -5.0 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-11A,VGS=0V TJ=25 C,IF=-11A diF/dt=100A/µs 4 O o o 1 O 2 O 3 O 4 O 5 O Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=10mH, IAS=-11A, VDD=-50V, RG=27Ω*, Starting TJ =25oC _-11A, di/dt < _ 450A/µs, VDD < _ BVDSS , Starting TJ =25oC ISD < _ 2% Pulse Test : Pulse Width = 250µs, Duty Cycle < Essentially Independent of Operating Temperature P-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS Top : -1 5V -1 0V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V SFH9240 Fig 2. Transfer Characteristics -ID , Drain Current [A] -ID , Drain Current [A] 1 1 0 1 1 0 1 5 0 oC 0 1 0 0 1 0 2 5 oC @N o t e s: 1 .2 5 0 µs P u l s eT e s t 2 .T 5 oC C =2 -1 1 0 -1 1 0 0 1 0 1 1 0 -5 5 oC -1 1 0 @N o t e s: 1 .V GS = 0 V 2 .V 4 0V DS = 3 .2 5 0 µs P u l s eT e s t 6 8 1 0 2 4 -VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 1 . 5 0 Fig 4. Source-Drain Diode Forward Voltage -IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 1 . 2 5 1 1 0 1 . 0 0 V 1 0V GS = - 0 . 7 5 0 1 0 0 . 5 0 1 5 0 oC 2 5 oC @N o t e s: 1 .V GS = 0 V 2 .2 5 0 µs P u l s eT e s t 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 4 . 5 5 . 0 0 . 2 5 V 2 0V GS = 0 . 0 0 0 7 1 4 2 1 2 8 @N o t e:T 5 oC J =2 3 5 4 2 -1 1 0 0 . 5 1 . 0 1 . 5 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 2 5 0 0 C h o r t e d) iss= C gs+ C gd ( C ds= s C oss= C ds+ C gd C rss= C gd C iss 1 5 0 0 C oss 1 0 0 0 C rss 5 0 0 @N o t e s: 1 .V GS = 0 V 2 .f=1M H z Fig 6. Gate Charge vs. Gate-Source Voltage -VGS , Gate-Source Voltage [V] 2 0 0 0 1 0 Capacitance [pF] V 4 0V DS = V 1 0 0V DS = V = 1 6 0 V DS 5 @N o t e s:I 1 1A D = 0 0 1 0 2 0 3 0 4 0 5 0 00 1 0 1 1 0 -VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] SFH9240 Fig 7. Breakdown Voltage vs. Temperature 1 . 2 3 . 0 P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature -BVDSS , (Normalized) Drain-Source Breakdown Voltage 1 . 1 RDS(on) , (Normalized) Drain-Source On-Resistance 2 . 5 2 . 0 1 . 0 1 . 5 1 . 0 @N o t e s: 1 0V 1 .V GS = 2 .I 5 . 5A D =5 0 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 0 . 9 @N o t e s: 1 .V GS = 0 V 2 .I 2 5 0 µA D =5 0 2 5 0 2 5 5 0 7 5 1 0 0 o 0 . 5 0 . 8 7 5 1 2 5 1 5 .


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