Document
Advanced Power MOSFET
FEATURES
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V ! Lower RDS(ON) : 0.344 Ω (Typ.)
SFH9240
BVDSS = -200 V RDS(on) = 0.5 Ω ID = -11 A
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 ” from case for 5-seconds
o o o
Value -200 -11 -7.7
1 O
Units V A A V mJ A mJ V/ns W W/ C
o
-44 + _ 30 807 -11 12.6 -5.0 126 1.0 - 55 to +150
O 1 O 1 O 3 O
2
o
C
300
Thermal Resistance
Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 1.0 -40
o
Units
C/W
Rev. A
SFH9240
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller “ ) Charge Min. Typ. Max. Units -200 --2.0 ------------------0.16 ------6.5 207 81 16 23 54 19 46 9.2 22.9 ---4.0 -100 100 -10 -100 0.5 -310 120 40 55 115 50 59 --nC ns µA Ω S pF V
o
P-CHANNEL POWER MOSFET
Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-200V VDS=-160V,TC=125 C VGS=-10V,ID=-5.5A VDS=-40V,ID=-5.5A
4 O 4 O
o
V/ C ID=-250µA V nA
1220 1585
VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-11A, RG=9.1Ω See Fig 13
4 O 5 O
VDS=-160V,VGS=-10V, ID=-11A See Fig 6 & Fig 12
4 O 5 O
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O 4 O
Min. Typ. Max. Units --------180 1.24 -11 -44 -5.0 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-11A,VGS=0V TJ=25 C,IF=-11A diF/dt=100A/µs
4 O
o o
1 O 2 O 3 O 4 O 5 O
Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=10mH, IAS=-11A, VDD=-50V, RG=27Ω*, Starting TJ =25oC _-11A, di/dt < _ 450A/µs, VDD < _ BVDSS , Starting TJ =25oC ISD < _ 2% Pulse Test : Pulse Width = 250µs, Duty Cycle < Essentially Independent of Operating Temperature
P-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
VGS Top : -1 5V -1 0V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V
SFH9240
Fig 2. Transfer Characteristics
-ID , Drain Current [A]
-ID , Drain Current [A]
1 1 0
1 1 0
1 5 0 oC
0 1 0
0 1 0
2 5 oC
@N o t e s: 1 .2 5 0 µs P u l s eT e s t 2 .T 5 oC C =2
-1 1 0 -1 1 0 0 1 0 1 1 0
-5 5 oC
-1 1 0
@N o t e s: 1 .V GS = 0 V 2 .V 4 0V DS = 3 .2 5 0 µs P u l s eT e s t 6 8 1 0
2
4
-VDS , Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
1 . 5 0
Fig 4. Source-Drain Diode Forward Voltage
-IDR , Reverse Drain Current [A]
RDS(on) , [ Ω ] Drain-Source On-Resistance
1 . 2 5
1 1 0
1 . 0 0 V 1 0V GS = -
0 . 7 5
0 1 0
0 . 5 0
1 5 0 oC 2 5 oC @N o t e s: 1 .V GS = 0 V 2 .2 5 0 µs P u l s eT e s t 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 4 . 5 5 . 0
0 . 2 5 V 2 0V GS = 0 . 0 0 0 7 1 4 2 1 2 8 @N o t e:T 5 oC J =2 3 5 4 2
-1 1 0 0 . 5
1 . 0
1 . 5
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
2 5 0 0 C h o r t e d) iss= C gs+ C gd ( C ds= s C oss= C ds+ C gd C rss= C gd C iss 1 5 0 0 C oss 1 0 0 0 C rss 5 0 0 @N o t e s: 1 .V GS = 0 V 2 .f=1M H z
Fig 6. Gate Charge vs. Gate-Source Voltage
-VGS , Gate-Source Voltage [V]
2 0 0 0
1 0
Capacitance [pF]
V 4 0V DS = V 1 0 0V DS = V = 1 6 0 V DS
5
@N o t e s:I 1 1A D = 0 0 1 0 2 0 3 0 4 0 5 0
00 1 0
1 1 0
-VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
SFH9240
Fig 7. Breakdown Voltage vs. Temperature
1 . 2 3 . 0
P-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
-BVDSS , (Normalized) Drain-Source Breakdown Voltage
1 . 1
RDS(on) , (Normalized) Drain-Source On-Resistance
2 . 5
2 . 0
1 . 0
1 . 5
1 . 0 @N o t e s: 1 0V 1 .V GS = 2 .I 5 . 5A D =5 0 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5
0 . 9
@N o t e s: 1 .V GS = 0 V 2 .I 2 5 0 µA D =5 0 2 5 0 2 5 5 0 7 5 1 0 0
o
0 . 5
0 . 8 7 5
1 2 5
1 5 .