Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Opereting Temperature n Extended Safe Operating Area n Lower Leakage Current : -10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.912 Ω (Typ.)
SFP9510
BVDSS = -100 V RDS(on) = 1.2 Ω ID = -3.6 A
TO-220
1 2 3
1.Ga...
