SFP9520

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Opereting Temperature n Extended Safe Operating Area n Lower Leakage Current : -10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.444 Ω (Typ.) SFP9520 BVDSS = -100 V RDS(on) = 0.6 Ω ID = -6 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o 2 O 1 O 1 O 3 O o o Value -100 -6 -4 1 O Units V A A V mJ A mJ V/ns W W/ C o -24 ±30 144 -6 4.9 -6.5 49 0.33 - 55 to +175 o C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 3.06 -62.5 o Units C/W Rev. C SFP9520 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-So...