Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑...
Description
Advanced Power MOSFET
FEATURES
❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : -10uA (Max.) @ VDS= -200V ❑ Lower RDS(ON) : 0.383 Ω (Typ.)
SFP9640L
BVDSS = -200 V RDS(on) = 0.5Ω ID = -11 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds
② ① ① ③ ①
Value -200 -11 -7.5 -44 ±20 806 -11 9.8 -5.0 98 0.78 - 55 to +150
Units V A A V mJ A mJ V/ns W W/℃
℃ 300
Thermal Resistance
Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.27 -62.5 ℃/W Units
Rev. A
SFP9640L
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min. Typ. Max. Units --0.16 ------5.47 ---2.0 -100 100 -10 -100 0.5 -μA Ω S V V/℃ V nA
N-CHANNEL POWER MOSFET
Test Condition VGS=0V,ID=-250μA ID=-250μA VGS=-20V VGS=20V VDS=-200...
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