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SFS9624 Dataheets PDF



Part Number SFS9624
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet SFS9624 DatasheetSFS9624 Datasheet (PDF)

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Low RDS(ON) : 1.65 Ω (Typ.) 1 2 3 SFS9624 BVDSS = -250 V RDS(on) = 2.4 Ω ID = -2.4 A TO-220F 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuou.

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Low RDS(ON) : 1.65 Ω (Typ.) 1 2 3 SFS9624 BVDSS = -250 V RDS(on) = 2.4 Ω ID = -2.4 A TO-220F 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 ” from case for 5-seconds o o o Value -250 -2.4 -1.8 1 O Units V A A V mJ A mJ V/ns W W/ C o -9.6 + _ 30 144 -2.4 2.8 -4.8 28 0.22 - 55 to +150 O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 4.46 62.5 Units o C/W Rev. B ©1999 Fairchild Semiconductor Corporation SFS9624 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller “ ) Charge Min. Typ. Max. Units -250 --2.0 ------------------0.22 ------1.8 415 65 24 11 19 34 15 16 3.3 7.8 ---4.0 -100 100 -10 -100 2.4 -540 95 35 30 50 80 40 20 --nC ns pF µA Ω Ω V V nA P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-250V VDS=-200V,TC=125 C VGS=-10V,ID=-1.2A VDS=-40V,ID=-1.2A 4 O 4 O o o V/ C ID=-250µA VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-125V,ID=-2.7A, RG=18Ω See Fig 13 4 O 5 O VDS=-200V,VGS=-10V, ID=-2.7A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O Min. Typ. Max. Units --------140 0.7 -2.4 -9.6 -5.0 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-2.4A,VGS=0V TJ=25 C,IF=-2.7A diF/dt=100A/µs 4 O o o O 4 Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=40mH, I =-2.4A, V =-50V, R =27Ω*, Starting T =25 C O AS DD G J o 3 ISD < _300A/µs, VDD_ _-2.7A, di/dt <


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