Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Low RDS(ON) : 1.65 Ω (Typ.)
1 2 3
SFS9624
BVDSS = -250 V RDS(on) = 2.4 Ω ID = -2.4 A
TO-220F
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 ” from case for 5-seconds
o o o
Value -250 -2.4 -1.8
1 O
Units V A A V mJ A mJ V/ns W W/ C
o
-9.6 + _ 30 144 -2.4 2.8 -4.8 28 0.22 - 55 to +150
O 1 O 1 O 3 O
2
o
C
300
Thermal Resistance
Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 4.46 62.5 Units
o
C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
SFS9624
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller “ ) Charge Min. Typ. Max. Units -250 --2.0 ------------------0.22 ------1.8 415 65 24 11 19 34 15 16 3.3 7.8 ---4.0 -100 100 -10 -100 2.4 -540 95 35 30 50 80 40 20 --nC ns pF µA Ω Ω V V nA
P-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-250V VDS=-200V,TC=125 C VGS=-10V,ID=-1.2A VDS=-40V,ID=-1.2A
4 O 4 O
o
o V/ C ID=-250µA
VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-125V,ID=-2.7A, RG=18Ω See Fig 13
4 O 5 O
VDS=-200V,VGS=-10V, ID=-2.7A See Fig 6 & Fig 12
4 O 5 O
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
Min. Typ. Max. Units --------140 0.7 -2.4 -9.6 -5.0 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-2.4A,VGS=0V TJ=25 C,IF=-2.7A diF/dt=100A/µs
4 O
o o
O
4
Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=40mH, I =-2.4A, V =-50V, R =27Ω*, Starting T =25 C O AS DD G J o 3 ISD < _300A/µs, VDD_ _-2.7A, di/dt <