Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Low RDS(ON) : 0.206 Ω (Typ.)
SFS9Z24
BVDSS = -60 V RDS(on) = 0.28 Ω ID = -7.5 A
TO-220F
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