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SFWI9Z14 Dataheets PDF



Part Number SFWI9Z14
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet SFWI9Z14 DatasheetSFWI9Z14 Datasheet (PDF)

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Low RDS(ON) : 0.362 Ω (Typ.) 1 SFW/I9Z14 BVDSS = -60 V RDS(on) = 0.5 Ω ID = -6.7 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Vo.

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Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Low RDS(ON) : 0.362 Ω (Typ.) 1 SFW/I9Z14 BVDSS = -60 V RDS(on) = 0.5 Ω ID = -6.7 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -60 -6.7 -4.7 1 O 2 O 1 O 1 O 3 O o Units V A A V mJ A mJ V/ns W W W/ C o -27 ±30 115 -6.7 3.8 -5.5 3.8 38 0.25 - 55 to +175 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds TJ , TSTG TL o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 3.95 40 62.5 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. C SFW/I9Z14 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units -60 --2.0 ------------------0.05 ------2.4 270 90 25 10 19 21 16 9 1.8 4.2 ---4.0 -100 100 -10 -100 0.5 -350 135 35 30 50 50 40 11 --nC ns pF µA Ω S V o P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-20V VGS=20V VDS=-60V VDS=-48V,TC=150 C VGS=-10V,ID=-3.4A VDS=-30V,ID=-3.4A 4 O 4 O o V/ C ID=-250µA V nA VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-30V,ID=-6.7A, RG=24 Ω See Fig 13 VDS=-48V,VGS=-10V, ID=-6.7A See Fig 6 & Fig 12 4O 5 O 4O 5 O Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O Min. Typ. Max. Units --------75 0.17 -6.7 -27 -3.8 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-6.7A,VGS=0V TJ=25 C,IF=-6.7A diF/dt=100A/µs 4 O o o O 4 Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=3.0mH, IAS=-6.7A, VDD=-25V, RG=27Ω*, Starting TJ =25ooC 3 I < _ -6.7A, di/dt < _ 200A/µs, VDD< _ BVDSS , Starting TJ =25 C O SD 4 _ 2% O Pulse Test : Pulse Width = 250µs, Duty Cycle< 5 Essentially Independent of Operating Temperature O P-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS Top : -1 5V -1 0V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V SFW/I9Z14 Fig 2. Transfer Characteristics 1 0 1 1 1 0 -ID , Drain Current [A] -ID , Drain Current [A] 1 7 5 oC 0 1 0 0 1 0 2 5 oC @N o t e s: 1 .2 5 0 µs P u l s eT e s t 2 .T 5 oC C =2 -1 1 0 -1 1 0 0 1 0 1 1 0 -5 5 oC -1 1 0 @N o t e s: 1 .V GS = 0 V 2 .V 3 0V DS = u l s eT e s t 3 .2 5 0 µs P 6 8 1 0 2 4 -VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 1 . 2 Fig 4. Source-Drain Diode Forward Voltage -IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 1 1 0 0 . 9 V 1 0V GS = 0 . 6 0 1 0 1 7 5 oC 2 5 oC -1 1 0 0 . 3 V 2 0V GS = 0 . 0 0 5 1 0 1 5 @N o t e:T 5 oC J =2 2 0 2 5 @N o t e s: 1 .V GS = 0 V u l s eT e s t 2 .2 5 0 µs P 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 5 0 0 C h o r t e d) iss= C gs+ C gd ( C ds= s C oss= C ds+ C gd C rss= C gd C iss 3 0 0 C oss Fig 6. Gate Charge vs. Gate-Source Voltage 2 0 0 C rss @N o t e s: 1 .V GS = 0 V 2 .f=1M H z -VGS , Gate-Source Voltage [V] 4 0 0 1 0 Capacitance [pF] V 1 2V DS = V 3 0V DS = V 4 8V DS = - 5 1 0 0 @N o t e s:I 6 . 7A D= 0 0 2 4 6 8 1 0 00 1 0 1 1 0 -VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] SFW/I9Z14 Fig 7. Breakdown Voltage vs. Temperature 1 . 2 2 . 5 P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature -BVDSS , (Normalized) Drain-Source Breakdown Voltage RDS(on) , (Normalized) Drain-Source On-Resistance 2 . 0 1 . 1 1 . 5 1 . 0 1 . 0 @N o t e s: 1 0V 1 .V GS = 2 .I 3 . 4A D =5 0 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 2 0 0 0 . 9 @N .


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