Document
Advanced Power MOSFET
FEATURES
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! 175 C Operating Temperature ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ! Low RDS(ON) : 0.106 Ω (Typ.)
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SFW/I9Z34
BVDSS = -60 V RDS(on) = 0.14 Ω ID = -18 A
D2-PAK
2
o
I2-PAK
1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
o Total Power Dissipation (TA=25 C) * o o
Value -60 -18 -12.6
1 O
Units V A A V mJ A mJ V/ns W W W/ C
o
-72 ±30 555 -18 8.2 -5.5 3.8 82 0.55 - 55 to +175
O 1 O 1 O 3 O
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Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
o
TJ , TSTG TL
o
C
300
Thermal Resistance
Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 1.83 40 62.5
o
Units C/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. C
SFW/I9Z34
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units -60 --2.0 ------------------0.05 ------8.8 265 84 14 24 43 28 30 5.3 12 ---4.0 -100 100 -10 -100 0.14 -400 125 40 60 95 65 38 --nC ns µA Ω S pF V
o
P-CHANNEL POWER MOSFET
Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-20V VGS=20V VDS=-60V VDS=-48V,TC=150 C VGS=-10V,ID=-9A VDS=-30V,ID=-9A
4 O 4 O
o
V/ C ID=-250µA V nA
890 1155
VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-30V,ID=-18A, RG=12 Ω See Fig 13 VDS=-48V,VGS=-10V, ID=-18A See Fig 6 & Fig 12
4O 5 O 4O 5 O
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
Min. Typ. Max. Units --------85 0.25 -18 -72 -3.9 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-18A,VGS=0V TJ=25 C,IF=-18A diF/dt=100A/µs
4 O
o o
O
4
Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=2.0mH, IAS=-18A, VDD=-25V, RG=27Ω*, Starting TJ =25ooC 3 I < _ -18A, di/dt < _ 300A/µs, VDD < _ BVDSS , Starting TJ =25 C O SD 4 _ 2% O Pulse Test : Pulse Width = 250µs, Duty Cycle< 5 Essentially Independent of Operating Temperature O
P-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
VGS Top : -1 5V -1 0V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V
SFW/I9Z34
Fig 2. Transfer Characteristics
-ID , Drain Current [A]
-ID , Drain Current [A]
1 1 0
1 1 0
1 7 5 oC
0 1 0
2 5 oC
0 1 0
@N o t e s: 1 .2 5 0 µs P u l s eT e s t 2 .T 5 oC C =2
0 1 0 1 1 0
-5 5 oC
-1 1 0
@N o t e s: 1 .V GS = 0 V 2 .V 3 0V DS = 3 .2 5 0 µs P u l s eT e s t 6 8 1 0
-1 1 0
2
4
-VDS , Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0 . 4
Fig 4. Source-Drain Diode Forward Voltage
-IDR , Reverse Drain Current [A]
RDS(on) , [ Ω ] Drain-Source On-Resistance
0 . 3
1 1 0
V 1 0V GS = 0 . 2
0 1 0
0 . 1 V 2 0V GS = 0 . 0 0 1 0 2 0 3 0 4 0 @N o t e:T 5 oC J =2 5 0 6 0 7 0
1 7 5 oC 2 5 oC @N o t e s: 1 .V GS = 0 V u l s eT e s t 2 .2 5 0 µs P 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0
-1 1 0
0 . 5
1 . 0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
1 5 0 0 C h o r t e d) iss= C gs+ C gd ( C ds= s C oss= C ds+ C gd C rss= C gd
Fig 6. Gate Charge vs. Gate-Source Voltage
C oss 9 0 0
6 0 0 C rss 3 0 0
@N o t e s: 1 .V GS = 0 V 2 .f=1M H z
-VGS , Gate-Source Voltage [V]
1 2 0 0
C iss
1 0
Capacitance [pF]
V 1 2V DS = V 3 0V DS = V 4 8V DS = -
5
@N o t e s:I 1 8A D = 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5
00 1 0
1 1 0
-VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
SFW/I9Z34
Fig 7. Breakdown Voltage vs. Temperature
1 . 2
2 . 5
P-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
-BVDSS , (Normalized) Drain-Source Breakdown Voltage
RDS(on) , (Normalized) Drain-Source On-Resistance
1 . 1
2 . 0
1 . 5
1 . 0
1 . 0 @N o t e s: 1 .V 1 0V GS = 9 . 0A 2 .I D =5 0 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 2 0 0.