Preliminary data
SPI35N10 SPP35N10,SPB35N10
SIPMOS Power-Transistor
Feature
N-Channel Enhancement mode 175°C op...
Preliminary data
SPI35N10 SPP35N10,SPB35N10
SIPMOS Power-
Transistor
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
P-TO262-3-1 P-TO263-3-2
Product Summary VDS R DS(on) ID 100 44 35
P-TO220-3-1
V A
m
Type SPP35N10 SPB35N10 SPI35N10
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4123 Q67042-S4103 Q67042-S4124
Marking 35N10 35N10 35N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 35 26.4
Unit A
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
140 245 6 ±20 150 -55... +175 55/175/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID =35 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =35A, VDS =80V, di/dt=200A/µs, Tjmax =175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-01-31
Preliminary data
SPI35N10 SPP35N10,SPB35N10
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
F)
Symbol min. RthJC RthJA RthJA -
Values typ. max. 1 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1
Values typ....
