CMOS SRAM. HY6264A Datasheet

HY6264A SRAM. Datasheet pdf. Equivalent

Part HY6264A
Description Ic-64k CMOS SRAM
Feature HY6264A Series 8Kx8bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192x8-bit.
Manufacture Hyundai
Total Page 9 Pages
Datasheet
Download HY6264A Datasheet



HY6264A
HY6264A Series
8Kx8bit CMOS SRAM
DESCRIPTION
The HY6264A is a high-speed, low power and
8,192x8-bits CMOS static RAM fabricated using
Hyundai's high performance twin tub CMOS
process technology. This high reliability process
coupled with innovative circuit design techniques,
yields maximum access time of 70ns. The
HY6264A has a data retention mode that
guarantees data to remain valid at the minimum
power supply voltage of 2.0 volt. Using the CMOS
technology, supply voltage from 2.0 to 5.5 volt
has little effect on supply current in the data
retention mode. Reducing the supply voltage to
minimize current drain is unnecessary for the
HY6264A Series.
FEATURES
Fully static operation and Tri-state outputs
TTL compatible inputs and outputs
Low power consumption
Battery backup(L/LL-part)
-2.0V(min.) data retention
Standard pin configuration
-28 pin 600 mil PDIP
-28 pin 330 mil SOP
Product Voltage Speed
No. (V) (ns)
HY6264A
5.0 70/85/100
Note 1. Current value is max.
Operation
Current(mA)
50
Standby Current(uA)
L LL
1mA 100
10
Temperature
(°C)
0~70(Normal)
PIN CONNECTION
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
Vcc
/WE
CS2
A8
A9
A11
/OE
NC
A12
A7
A6
A5
A4
A3
21 A10 A2
1
2
3
4
5
6
7
8
20 /CS1 A1 9
19
18
17
16
15
I/O8 A0
I/O7 I/O1
I/O6
I/O5
I/O4
I/O2
I/O3
Vss
10
11
12
13
14
28 Vcc
27 /WE
26 CS2
25 A8
24
23
A9
A11
22
21
/OE
A10
20 /CS1
19 I/O8
18 I/O7
17 I/O6
16 I/O5
15 I/O4
PDIP
SOP
BLOCK DIAGRAM
A0 ROW DECODER
A12
/CS1
CS2
/OE
/WE
MEMORY ARRAY
128x512
I/O1
I/O8
PIN DESCRIPTION
Pin Name
/CS1
CS2
/WE
/OE
A0-A12
Pin Function
Chip Select 1
Chip Select 2
Write Enable
Output Enable
Address Inputs
Pin Name
I/O1-I/O8
Vcc
Vss
NC
Pin Function
Data Input/Output
Power(+5V)
Ground
No Connect
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 /Jan.99
Hyundai Semiconductor



HY6264A
HY6264A Series
ORDERING INFORMATION
PART NO.
HY6264AP
HY6264ALP
HY6264ALLP
HY6264AJ
HY6264ALJ
HY6264ALLJ
SPEED
70/85/100
70/85/100
70/85/100
70/85/100
70/85/100
70/85/100
POWER
L-part
LL-part
L-part
LL-part
PACKAGE
PDIP
PDIP
PDIP
SOP
SOP
SOP
ABSOLUTE MAXIMUM RATING (1)
Symbol
Vcc, VIN, VOUT
TA
TSTG
PD
IOUT
TSOLDER
Parameter
Power Supply, Input/Output Voltage
Operating Temperature
Storage Temperature
Power Dissipation
Data Output Current
Lead Soldering Temperature & Time
Rating
-0.5 to 7.0
0 to 70
-65 to 125
1.0
50
260 10
Unit
V
°C
°C
W
mA
°Csec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these
or any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for an extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
TA=0°C TO 70°C
Symbol
Parameter
Vcc Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
Min.
4.5
2.2
-0.5(1)
Typ.
5.0
-
-
Max.
5.5
Vcc+0.5
0.8
Unit
V
V
V
Note
1.VIL = -3.0V for pulse width less than 50ns
TRUTH TABLE
/CS1 CS2 /WE
HXX
XLX
L HH
L HH
LHL
Note
1. H=VIH, L=VIL, X=Don't Care
/OE MODE
X Standby
X
H Output Disabled
L Read
X Write
I/O OPERATION
High-Z
High-Z
High-Z
Data Out
Data In
Rev.02 /Jan.99
2





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