HY6264A

HY6264A Series 8Kx8bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 70ns. The HY6264A has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltage from 2.0 to 5.5 volt has little effect on supply current in the data retention mode. Reducing the supply voltage to minimize current drain is unnecessary for the HY6264A Series. FEATURES Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) -2.0V(min.) data retention Standard pin configuration -28 pin 600 mil PDIP -28 pin 330 mil SOP Product Voltage Speed No. (V) (ns) HY6264A 5.0 70/85/100 Note 1. Current value is max. Operation Current(mA) 50 Standby Current(uA) L LL 1mA 100 10 Temperature (°C) 0~70(Normal) PIN CONNECTION NC A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /WE CS2 A8 A9 A11 /OE A10 /CS1 I/O8 I/O7 I/O6 I/O5 I/O4 BLOCK DIAGRAM A0 SENSE AMP ROW DECODER ADD INPUT BUFFER I/O1 OUTPUT BUFFER I/O8 CS2 PDIP SOP /OE /WE PIN DESCRIPTION Pin Name /CS1 CS2 /WE /OE A0-A12 Pin Function Chip Select 1 Chip Select 2 Write Enable Output ...