Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan...
Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
SPU04N60S5 SPD04N60S5
VDS RDS(on)
ID
PG-TO252
600 V 0.95 Ω 4.5 A
PG-TO251
2
3 1
3 2 1
Type SPU04N60S5 SPD04N60S5
Package PG-TO251 PG-TO252
Ordering Code Q67040-S4228 Q67040-S4202
Marking 04N60S5 04N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 3.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 4.5 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Ptot
Operating and storage temperature
Tj , Tstg
Value
4.5 2.8 9 130
0.4
4.5 ±20 ±30 50 -55... +150
Unit A
mJ
A V W °C
Rev. 2.5
Page 1
2008-04-08
SPU04N60S5 SPD04N60S5
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 4.5 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s
Symbol dv/dt
Value 20
Unit V/ns
Symbol
RthJC RthJA RthJA
Tsold
Values
Unit
min. typ. max.
-
-
2.5 K/W
-
-
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