SPN04N60C2

Final data SPN04N60C2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in SOT 223 Product Summary VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V Ω A Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity 3 2 1 VPS05163 Type SPN04N60C2 Package SOT-223 Ordering Code Q67040-S4308 Marking 04N60C2 G,1 D,2/4 S,3 Maximum Ratings, at TA = 25°C, unless otherwise specified Parameter Continuous drain current TA = 25 °C TA = 70 °C Symbol ID Value 0.8 0.65 Unit A Pulsed drain current, tp limited by Tjmax Reverse diode dv/dt IS =0.8A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C ID puls dv/dt VGS Ptot Tj , Tstg 3 6 ±20 1.8 -55... +150 V/ns V W °C Gate source voltage Power dissipation, TA = 25°C Operating and storage temperature Page 1 2002-07-29 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPN04N60C2 Symbol min. RthJS RthJA Tsold - Values typ. 20 110 0.05 max. 70 260 Unit K/W W/K °C V(BR)DSS VGS(th) IDSS 600 3.5 4.5 5.5 V Gate threshold voltage, VGS = VDS ID =200µA Zero gate voltage drain current VDS = 600 V,...