Document
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPP04N60S5
VDS RDS(on)
ID
600 V 0.95 Ω 4.5 A
PG-TO220
2
P-TO220-3-1
23 1
Type SPP04N60S5
Package PG-TO220
Ordering Code Q67040-S4200
Marking 04N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 3.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 4.5 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
IAR VGS VGS Ptot Tj , Tstg
Value
Unit
A
4.5
2.8
9
130
mJ
0.4
4.5
A
±20
V
±30
50
W
-55... +150
°C
Rev. 2.6
Page 1
2007-08-30
SPP04N60S5
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 4.5 A, Tj = 125 °C
Symbol dv/dt
Value 20
Unit V/ns
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s3)
Symbol
RthJC RthJA RthJA
Tsold
Values
Unit
min. typ. max.
-
-
2.5 K/W
-
-
62
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=4.5A
-
700
breakdown voltage
-V -
Gate threshold voltage
VGS(th) ID=200µΑ, VGS=VDS 3.5
4.5
5.5
Zero gate voltage drain current IDSS
VDS=600V, VGS=0V,
µA
Tj=25°C,
-
0.5
1
Tj=150°C
-
-
50
Gate-source leakage current
IGSS
VGS=20V, VDS=0V
-
- 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=2.8A,
Ω
Tj=25°C
- 0.85 0.95
Tj=150°C
-
2.3
-
Gate input resistance
RG
f=1MHz, open Drain
-
20
-
Rev. 2.6
Page 2
2007-08-30
SPP04N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Characteristics
Transconductance
gfs
VDS≥2*ID*RDS(on)max,
-
2.5
-S
ID=2.8A
Input capacitance
Ciss
VGS=0V, VDS=25V,
- 580 - pF
Output capacitance
Coss
f=1MHz
- 220 -
Reverse transfer capacitance Crss
-
7
-
Effective output capacitance,4) Co(er) VGS=0V,
-
20
- pF
energy related
VDS=0V to 480V
Effective output capacitance,5) Co(tr)
-
35
-
time related
Turn-on delay time Rise time
t d(on)
VDD=350V, VGS=0/10V,
-
55
- ns
ID=4.5A, RG=18Ω
tr
VDD=350V, VGS=0/10V,
-
30
-
Turn-off delay time Fall time
ID=4.5A, RG=18
t d(off)
VDD=350V, VGS=0/10V,
-
tf
ID=4.5A, RG=18Ω
-
60 90 15 22.5
Gate Charge Characteristics
Gate to source charge Gate to drain charge
Qgs Qgd
VDD=350V, ID=4.5A
Gate charge total
Qg
VDD=350V, ID=4.5A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=4.5A
-
4.5
- nC
-
11
-
- 17.6 22.9
-
8
-V
1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.6
Page 3
2007-08-30
SPP04N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Inverse diode continuous forward current
IS
TC=25°C
-
-
4.5 A
Inverse diode direct current,
ISM
pulsed
-
-
9
Inverse diode forward voltage Reverse recovery time Reverse recovery charge
VSD trr Qrr
VGS=0V, IF=IS VR=350V, IF=IS , diF/dt=100A/µs
-
1
1.2 V
-
900 1530 ns
-
3.2
- µC
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
Value
typ.
typ.
Thermal resistance
Thermal capacitance
Rth1 Rth2 Rth3 Rth4 Rth5 Rth6
0.039 0.074 0.132 0.555 0.529 0.169
K/W
Cth1 Cth2 Cth3 Cth4 Cth5 Cth6
0.00007347 0.0002831 0.0004062 0.001215
0.00276 0.029
Unit Ws/K
Ptot (t)
Tj R th1
C th 1
C th 2
Rth,n Tcase External Heatsink
C th ,n
Tamb
Rev. 2.6
Page 4
2007-08-30
SPP04N60S5
Ptot
1 Power dissipation Ptot = f (TC)
SPP04N60S5
55 W
45 40 35 30 25 20 15 10
5 0
0 20 40 60 80 100 120 °C 160 TC
3 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T
10 1
K/W
10 0
2 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25°C
10 1
A
10 0
ID
tp = 0.001 ms
tp = 0.01 ms
10 -1
t.