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SPP04N60S5 Dataheets PDF



Part Number SPP04N60S5
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet SPP04N60S5 DatasheetSPP04N60S5 Datasheet (PDF)

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP04N60S5 VDS RDS(on) ID 600 V 0.95 Ω 4.5 A PG-TO220 2 P-TO220-3-1 23 1 Type SPP04N60S5 Package PG-TO220 Ordering Code Q67040-S4200 Marking 04N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited b.

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP04N60S5 VDS RDS(on) ID 600 V 0.95 Ω 4.5 A PG-TO220 2 P-TO220-3-1 23 1 Type SPP04N60S5 Package PG-TO220 Ordering Code Q67040-S4200 Marking 04N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 3.4 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 4.5 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature IAR VGS VGS Ptot Tj , Tstg Value Unit A 4.5 2.8 9 130 mJ 0.4 4.5 A ±20 V ±30 50 W -55... +150 °C Rev. 2.6 Page 1 2007-08-30 SPP04N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 4.5 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s3) Symbol RthJC RthJA RthJA Tsold Values Unit min. typ. max. - - 2.5 K/W - - 62 - - 62 - 35 - - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - Drain-Source avalanche V(BR)DS VGS=0V, ID=4.5A - 700 breakdown voltage -V - Gate threshold voltage VGS(th) ID=200µΑ, VGS=VDS 3.5 4.5 5.5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, µA Tj=25°C, - 0.5 1 Tj=150°C - - 50 Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=2.8A, Ω Tj=25°C - 0.85 0.95 Tj=150°C - 2.3 - Gate input resistance RG f=1MHz, open Drain - 20 - Rev. 2.6 Page 2 2007-08-30 SPP04N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, - 2.5 -S ID=2.8A Input capacitance Ciss VGS=0V, VDS=25V, - 580 - pF Output capacitance Coss f=1MHz - 220 - Reverse transfer capacitance Crss - 7 - Effective output capacitance,4) Co(er) VGS=0V, - 20 - pF energy related VDS=0V to 480V Effective output capacitance,5) Co(tr) - 35 - time related Turn-on delay time Rise time t d(on) VDD=350V, VGS=0/10V, - 55 - ns ID=4.5A, RG=18Ω tr VDD=350V, VGS=0/10V, - 30 - Turn-off delay time Fall time ID=4.5A, RG=18 t d(off) VDD=350V, VGS=0/10V, - tf ID=4.5A, RG=18Ω - 60 90 15 22.5 Gate Charge Characteristics Gate to source charge Gate to drain charge Qgs Qgd VDD=350V, ID=4.5A Gate charge total Qg VDD=350V, ID=4.5A, VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=4.5A - 4.5 - nC - 11 - - 17.6 22.9 - 8 -V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.6 Page 3 2007-08-30 SPP04N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 4.5 A Inverse diode direct current, ISM pulsed - - 9 Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF=IS , diF/dt=100A/µs - 1 1.2 V - 900 1530 ns - 3.2 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. typ. Thermal resistance Thermal capacitance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.039 0.074 0.132 0.555 0.529 0.169 K/W Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00007347 0.0002831 0.0004062 0.001215 0.00276 0.029 Unit Ws/K Ptot (t) Tj R th1 C th 1 C th 2 Rth,n Tcase External Heatsink C th ,n Tamb Rev. 2.6 Page 4 2007-08-30 SPP04N60S5 Ptot 1 Power dissipation Ptot = f (TC) SPP04N60S5 55 W 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 °C 160 TC 3 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T 10 1 K/W 10 0 2 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 1 A 10 0 ID tp = 0.001 ms tp = 0.01 ms 10 -1 t.


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