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BS616LV8010 Dataheets PDF



Part Number BS616LV8010
Manufacturers Brilliance Semiconductor
Logo Brilliance Semiconductor
Description Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Datasheet BS616LV8010 DatasheetBS616LV8010 Datasheet (PDF)

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 16 bit (Single CE Pin) „ DESCRIPTION BS616LV8010 • Vcc operation voltage : 2.7~3.6V • Very low power consumption : Vcc = 3.0V C-grade: 30mA (@55ns) operating current I -grade: 31mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade: 25mA (@70ns) operating current 1.5uA (Typ.) CMOS standby current • High speed access time : -55 55ns -70 70ns • Automatic power down when chip is deselected • Three state outputs and TT.

  BS616LV8010   BS616LV8010



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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 16 bit (Single CE Pin) „ DESCRIPTION BS616LV8010 • Vcc operation voltage : 2.7~3.6V • Very low power consumption : Vcc = 3.0V C-grade: 30mA (@55ns) operating current I -grade: 31mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade: 25mA (@70ns) operating current 1.5uA (Typ.) CMOS standby current • High speed access time : -55 55ns -70 70ns • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV8010 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1.5uA at 3V/25oC and maximum access time of 55ns at 3V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE) ,active LOW output enable(OE) and three-state output drivers. The BS616LV8010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV8010 is available in 48B BGA and 44L TSOP2 packages. „ PRODUCT FAMILY PRODUCT FAMILY BS616LV8010EC BS616LV8010FC BS616LV8010EI BS616LV8010FI OPERATING TEMPERATURE +0 C to +70 C -40 O C to +85O C O O Vcc RANGE 2.7V ~ 3.6V 2.7V ~ 3.6V SPEED ( ns ) 55ns : 3.0~3.6V 70ns : 2.7~3.6V ( I CCSB1, Max ) POWER DISSIPATION STANDBY Operating ( ICC , Max ) PKG TYPE TSOP2-44 BGA-48-0912 TSOP2-44 BGA-48-0912 Vcc=3V Vcc=3V 55ns Vcc=3V 70ns 55 / 70 55 / 70 5uA 10uA 30mA 31mA 24mA 25mA „ PIN CONFIGURATIONS A4 A3 A2 A1 A0 CE DQ0 DQ1 DQ2 DQ3 Vcc Vss DQ4 DQ5 DQ6 DQ7 WE A18 A17 A16 A15 A14 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 Vss Vcc DQ11 DQ10 DQ9 DQ8 A8 A9 A10 A11 A12 A13 „ BLOCK DIAGRAM A4 A3 A2 A1 A0 A17 A16 A15 A14 A13 A12 Address Input Buffer 22 Row Decoder 2048 Memory Array 2048 x 4096 BS616LV8010EC BS616LV8010EI 4096 D0 16 Data Input Buffer 16 Column I/O 1 2 OE UB D10 D11 D12 D13 NC . A8 3 A0 A3 A5 A17 VSS A 14 A12 A9 4 A1 A4 A6 A7 A16 A 15 A 13 A 10 5 A2 CE D1 D3 D4 D5 WE A 11 6 NC D0 D2 V CC V SS D6 D7 NC A B C D E F G H LB D8 D9 V SS V CC D14 D15 A 18 . . . . D15 . . . . Write Driver Sense Amp 256 Column Decoder 16 Data Output 16 Buffer CE WE OE UB LB Vcc Vss Control 16 Address Input Buffer A11 A10 A9 A8 A7 A6 A5 A18 48-Ball CSP top View Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice. R0201-BS616LV8010 1 Revision 1.1 Jan. 2004 BSI „ PIN DESCRIPTIONS BS616LV8010 Function These 19 address inputs select one of the 524,288 x 16-bit words in the RAM. CE is act.


8080A BS616LV8010 ADP3502


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