TPC8211

TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) TPC8211 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications l Low drain−source ON resistance: RDS (ON) = 25 mΩ (typ.) l High forward transfer admittance: |Yfs| = 7.0 S (typ.) l Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) l Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5.5 22 1.5 W PD(2) 1.1 Unit V V V A Drain power dissipation (t = 10 s) (Note 2a) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) JEDEC JEITA TOSHIBA ― ― 2-6J1E Weight: 0.08 g (typ.) PD (1) 0.75 W PD (2) EAS IAR EAR Tch Tstg 0.45 8 39.3 5.5 0.1 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 7 6 5 Drain power dissipation (t = 10 s) (Note 2b) Circuit Configuration Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-02-18 TPC8211 Th...