Document
www.DataSheet4U.com
STP4NA80 STP4NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP4NA80 STP4NA80FI
s s s s s s s
V DSS 800 V 800 V
R DS( on) < 3Ω < 3Ω
ID 4A 2.5 A
TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220
3 1 2
1 2
3
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP4NA80 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) 800 800 ± 30 4 2.5 16
o
Value STP4NA80FI
Unit
V V V 2.5 1.6 16 45 0.36 2000 A A A W W/o C V
o o
w
w
w
a D .
(•) Pulse width limited by safe operating area
S a t
t e he
Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
4U
.c
om
110 0.88 -65 to 150 150
C C
February 1994
1/10
www.DataSheet4U.com
STP4NA80/FI
THERMAL DATA
TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.13 62.5 0.5 300 ISOWATT220 2.77
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%)
o
Max Value 4 80 3.1 2.5
Unit A mJ mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF
Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VG S = 0 Min. 800 250 1000 ± 100 Typ. Max. Unit V µA µA nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 30 V
T c = 125 oC
ON (∗ )
Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current Test Conditions ID = 250 µ A T c = 100 oC 4 Min. 2.25 Typ. 3 2.4 Max. 3.75 3 6 Unit V Ω Ω A
V GS = 10V ID = 2 A V GS = 10V I D = 2 A
V DS > ID( on) x RD S(on) max V GS = 10 V
DYNAMIC
Symbol gfs ( ∗ ) C iss C oss C rss
Parameter
Forward Transconductance
w
w
w
a D .
S a t
e e h
Input Capacitance Output Capacitance Reverse Transfer Capacitance
U 4 t
m o .c
Test Conditions V DS > ID( on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 2 A VG S = 0
Min. 2.5
Typ. 4.3 955 105 24
Max.
Unit S
1350 150 35
pF pF pF
2/10
www.DataSheet4U.com
STP4NA80/FI
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 400 V I D = 2 A VGS = 10 V R G = 47 Ω (see test circuit, figure 3) V DD = 640 V I D = 4 A R G = 47 Ω VGS = 10 V (see test circuit, figure 5) V DD = 640 V ID = 4 A V GS = 10 V Min. Typ. 27 70 170 Max. 40 100 Unit ns ns A/ µ s
Qg Q gs Q gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
44 7 18
65
nC nC nC
SWITCHING OFF
Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 640 V I D = 4 A R G = 47 Ω VGS = 10 V (see test circuit, figure 5) Min. Typ. 60 20 90 Max. 85 30 130 Unit ns ns ns
SOURCE DRAIN DIODE
Symbol IS D I SDM( • ) VS D (∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 A V GS = 0 680 10.5 31 I SD = 4 A di/dt = 100 A/ µ s T j = 150 o C V DD = 100 V (see test circuit, figure 5) Test Conditions Min. Typ. Max. 4 16 1.6 Unit A A V ns µC A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
Safe Operating Areas for TO-220
Safe Operating Areas for ISOWATT220
w
w
w
a D .
S a t
e e h
U 4 t
m o .c
3/10
www.DataSheet4U.com
STP4NA80/FI
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220
Output Characteristics
Transfer Characteristics
w
w
w
a D .
S.