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STP3NA80 Dataheets PDF



Part Number STP3NA80
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Datasheet STP3NA80 DatasheetSTP3NA80 Datasheet (PDF)

www.DataSheet4U.com STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI s s s s s s s V DSS 800 V 800 V R DS( on) < 3Ω < 3Ω ID 4A 2.5 A TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technol.

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www.DataSheet4U.com STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI s s s s s s s V DSS 800 V 800 V R DS( on) < 3Ω < 3Ω ID 4A 2.5 A TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP4NA80 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) 800 800 ± 30 4 2.5 16 o Value STP4NA80FI Unit V V V 2.5 1.6 16 45 0.36 2000 A A A W W/o C V o o w w w a D . (•) Pulse width limited by safe operating area S a t t e he Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 4U .c om 110 0.88  -65 to 150 150 C C February 1994 1/10 www.DataSheet4U.com STP4NA80/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.13 62.5 0.5 300 ISOWATT220 2.77 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) o Max Value 4 80 3.1 2.5 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VG S = 0 Min. 800 250 1000 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 30 V T c = 125 oC ON (∗ ) Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current Test Conditions ID = 250 µ A T c = 100 oC 4 Min. 2.25 Typ. 3 2.4 Max. 3.75 3 6 Unit V Ω Ω A V GS = 10V ID = 2 A V GS = 10V I D = 2 A V DS > ID( on) x RD S(on) max V GS = 10 V DYNAMIC Symbol gfs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance w w w a D . S a t e e h Input Capacitance Output Capacitance Reverse Transfer Capacitance U 4 t m o .c Test Conditions V DS > ID( on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 2 A VG S = 0 Min. 2.5 Typ. 4.3 955 105 24 Max. Unit S 1350 150 35 pF pF pF 2/10 www.DataSheet4U.com STP4NA80/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 400 V I D = 2 A VGS = 10 V R G = 47 Ω (see test circuit, figure 3) V DD = 640 V I D = 4 A R G = 47 Ω VGS = 10 V (see test circuit, figure 5) V DD = 640 V ID = 4 A V GS = 10 V Min. Typ. 27 70 170 Max. 40 100 Unit ns ns A/ µ s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 44 7 18 65 nC nC nC SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 640 V I D = 4 A R G = 47 Ω VGS = 10 V (see test circuit, figure 5) Min. Typ. 60 20 90 Max. 85 30 130 Unit ns ns ns SOURCE DRAIN DIODE Symbol IS D I SDM( • ) VS D (∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 A V GS = 0 680 10.5 31 I SD = 4 A di/dt = 100 A/ µ s T j = 150 o C V DD = 100 V (see test circuit, figure 5) Test Conditions Min. Typ. Max. 4 16 1.6 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas for TO-220 Safe Operating Areas for ISOWATT220 w w w a D . S a t e e h U 4 t m o .c 3/10 www.DataSheet4U.com STP4NA80/FI Thermal Impedeance For TO-220 Thermal Impedance For ISOWATT220 Derating Curve For TO-220 Derating Curve For ISOWATT220 Output Characteristics Transfer Characteristics w w w a D . S.


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