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2SK3543 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | 2SK3543 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | 2SK3543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3543 Switching Regulator and DC-DC Converter Applications Motor Drive Applications · · · · Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 1.3 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch. |
| Manufacture | Toshiba |
| Datasheet |
| Part | 2SK3543 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | 2SK3543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3543 Switching Regulator and DC-DC Converter Applications Motor Drive Applications · · · · Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 1.3 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch. |
| Manufacture | Toshiba |
| Datasheet |
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