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N-Channel MOSFET. 2SK3546J Datasheet

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N-Channel MOSFET. 2SK3546J Datasheet






2SK3546J MOSFET. Datasheet pdf. Equivalent




2SK3546J MOSFET. Datasheet pdf. Equivalent





Part

2SK3546J

Description

Silicon N-Channel MOSFET



Feature


Silicon Junction FETs (Small Signal) 2S K3546J Silicon N-Channel MOSFET For swi tching ■ Features 0.27±0.02 (0.50)(0 .50) 1.60+0.05 –0.03 1.00±0.05 3 0. 80±0.05 Unit: mm 0.12+0.03 –0.01 1 .60±0.05 0.85+0.05 –0.03 0 to 0.02 Parameter Drain-source voltage Gate-s ource voltage (Drain open) Drain curren t Peak drain current Power dissipation Channel temperature Storage te.
Manufacture

Panasonic

Datasheet
Download 2SK3546J Datasheet


Panasonic 2SK3546J

2SK3546J; mperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 125 125 55 to +125 Unit V 5˚ mA mA mW °C °C 1: Gate 2: Source 3: Drain SSMini3 -F1 Package Marking Symbol: 5F ■ El ectrical Characteristics Ta = 25°C ± 3°C Parameter Drain-source surrender v oltage Drain-source cutoff current Gate -source cutoff current Gate threshold v oltage Drain-source ON resist.


Panasonic 2SK3546J

ance Symbol VDSS IDSS IGSS Vth RDS(on) Yfs Ciss Coss Crss ton toff Condit ions ID = 10 µA, VGS = 0 VDS = 50 V, V GS = 0 VGS = ±7 V, VDS = 0 ID = 1.0 µ A, VDS = 3 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V Forward transfer admittance Short-circuit forward transf er capacitance (Common source) Short-ci rcuit output capacitance (Common source ) Reverse transfer capaci.


Panasonic 2SK3546J

tance (Common source) Turn-on time * Tur n-off time * Min 50 Typ Max Unit V µA µA V Ω mS pF pF pF ns ns 1.0 ± 5.0 0.9 1.2 8 6 20 60 12 7 3 200 200 1. 5 15 12 ID = 10 mA, VDS = 3 V, f = 1 k Hz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω Note).

Part

2SK3546J

Description

Silicon N-Channel MOSFET



Feature


Silicon Junction FETs (Small Signal) 2S K3546J Silicon N-Channel MOSFET For swi tching ■ Features 0.27±0.02 (0.50)(0 .50) 1.60+0.05 –0.03 1.00±0.05 3 0. 80±0.05 Unit: mm 0.12+0.03 –0.01 1 .60±0.05 0.85+0.05 –0.03 0 to 0.02 Parameter Drain-source voltage Gate-s ource voltage (Drain open) Drain curren t Peak drain current Power dissipation Channel temperature Storage te.
Manufacture

Panasonic

Datasheet
Download 2SK3546J Datasheet




 2SK3546J
Silicon Junction FETs (Small Signal)
2SK3546J
Silicon N-Channel MOSFET
For switching
Features
High-speed switching
Wide frequency band
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Drain-source voltage
Gate-source voltage (Drain open)
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
VDS
VGSO
ID
IDP
PD
Tch
Tstg
50
±7
100
200
125
125
55 to +125
Unit
V
V
mA
mA
mW
°C
°C
1.60+–00..0035
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
Unit: mm
0.12+–00..0013
1: Gate
2: Source
3: Drain
SSMini3-F1 Package
Marking Symbol: 5F
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
VDSS
IDSS
IGSS
Vth
RDS(on)
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common source)
Yfs
Ciss
ID = 10 µA, VGS = 0
VDS = 50 V, VGS = 0
VGS = ±7 V, VDS = 0
ID = 1.0 µA, VDS = 3 V
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
ID = 10 mA, VDS = 3 V, f = 1 kHz
VDS = 3 V, VGS = 0, f = 1 MHz
50 V
1.0 µA
±5.0 µA
0.9 1.2 1.5
V
8 15
6 12
20 60
mS
12 pF
Short-circuit output capacitance
(Common source)
Coss VDS = 3 V, VGS = 0, f = 1 MHz
7 pF
Reverse transfer capacitance
(Common source)
Crss VDS = 3 V, VGS = 0, f = 1 MHz
3 pF
Turn-on time *
Turn-off time *
ton VDD = 3 V, VGS = 0 V to 3 V, RL = 470
toff VDD = 3 V, VGS = 3 V to 0 V, RL = 470
200
200
ns
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ton, toff test circuit
VOUT 470
90%
VGS = 3.0 V
50
VDD = 3 V
VIN
VOUT
10%
10%
90%
Publication date: July 2003
SJF00037AED
ton toff
1




 2SK3546J
2SK3546J
PD Ta
140
120
100
80
60
40
20
0
0 40 80 120
Ambient temperature Ta (°C)
Yfs  VGS
0.16
VDS = 3 V
f = 1 kHz
0.14 Ta = 25°C
0.12
0.10
0.08
0.06
0.04
0.02
0
01234
Gate-source voltage VGS (V)
ID VDS
70
VGS = 2.5 V
60
2.4 V
50
2.3 V
40
2.2 V
30 2.1 V
20 2.0 V
10
Ta = 25°C
0
0 2 4 6 8 10 12
Drain-source voltage VDS (V)
ID VGS
250
VDS = 3 V
Ta = −25°C
25°C
200
85°C
150
100
50
0
0123456
Gate-source voltage VGS (V)
RDS(on) VGS
60
ID = 10 mA
50
40
30
20
25°C
Ta = 85°C
10
25°C
0
0246
Gate-source voltage VGS (V)
10
VO = 5 V
Ta = 25°C
VIN IO
1
0.1 1 10 100
Output current IO (mA)
2 SJF00037AED




 2SK3546J
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL



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