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2SK3546J Datasheet, Equivalent, N-Channel MOSFET.Silicon N-Channel MOSFET Silicon N-Channel MOSFET |
| Part | 2SK3546J |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | Silicon Junction FETs (Small Signal)
2SK3546J
Silicon N-Channel MOSFET
For switching ■ Features
0. 27±0. 02 (0. 50)(0. 50) 1. 60+0. 05 –0. 03 1. 00±0. 05 3 0. 80±0. 05 Unit: mm 0. 12+0. 03 –0. 01 1. 60±0. 05 0. 85+0. 05 –0. 03 0 to 0. 02 Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 125 125 −55 to +125 Unit V 5˚ mA mA mW °C °C 1: Gate 2: Source 3: Drain SSMini3-F1 Package Marking Symbol: 5F ■ Electrical Characteristics Ta = 25°C ± 3°C P. |
| Manufacture | Panasonic |
| Datasheet |
| Part | 2SK3546J |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | Silicon Junction FETs (Small Signal)
2SK3546J
Silicon N-Channel MOSFET
For switching ■ Features
0. 27±0. 02 (0. 50)(0. 50) 1. 60+0. 05 –0. 03 1. 00±0. 05 3 0. 80±0. 05 Unit: mm 0. 12+0. 03 –0. 01 1. 60±0. 05 0. 85+0. 05 –0. 03 0 to 0. 02 Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 125 125 −55 to +125 Unit V 5˚ mA mA mW °C °C 1: Gate 2: Source 3: Drain SSMini3-F1 Package Marking Symbol: 5F ■ Electrical Characteristics Ta = 25°C ± 3°C P. |
| Manufacture | Panasonic |
| Datasheet |
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