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2SK3547 Datasheet, Equivalent, n-channel MOSFET.Silicon n-channel MOSFET Silicon n-channel MOSFET |
| Part | 2SK3547 |
|---|---|
| Description | Silicon n-channel MOSFET |
| Feature | Silicon Junction FETs (Small Signal)
2SK3547
Silicon n-channel MOSFET
Unit: mm
For switching ■ Features
• High-speed switching • Wide frequency band • Gate-protection diode built-in 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 100 125 −55 to +125 Unit V V mA mA mW °C °C 0.15 min. 0.23+0.05 –0.02 1 2 0 to 0.01 0.5. |
| Manufacture | Panasonic |
| Datasheet |
| Part | 2SK3547 |
|---|---|
| Description | Silicon n-channel MOSFET |
| Feature | Silicon Junction FETs (Small Signal)
2SK3547
Silicon n-channel MOSFET
Unit: mm
For switching ■ Features
• High-speed switching • Wide frequency band • Gate-protection diode built-in 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 100 125 −55 to +125 Unit V V mA mA mW °C °C 0.15 min. 0.23+0.05 –0.02 1 2 0 to 0.01 0.5. |
| Manufacture | Panasonic |
| Datasheet |
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