MTP3055V

MTP3055V May 1999 MTP3055V N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features • 12 A, 60 V. RDS(ON) = 0.150 Ω @ VGS = 10 V • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating. ' * ' 6 72 * $EVROXWH 0D[LPXP 5DWLQJV 6\PERO W'66 W*66 D' Bh‡rT‚ˆ…prÃW‚y‡htr 9…hvÃ8ˆ……r‡ Ã8‚‡vˆ‚ˆ†Ã ÃQˆy†rq Q' 9…hvT‚ˆ…prÃW‚y‡htr 6 U Ã2Ã!$ƒ8ȁyr††Ã‚‡ur…v†rÁ‚‡rq & 3DUDPHWHU 5DWLQJV % 8QLWV W W 6 ± ! ! "& U‚‡hyÃQ‚r…Ã9v††vƒh‡v‚Ã5ÃU&ÃÃ2Ã!$ 8 ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ9r…h‡rÃhi‚‰rÃ!$ 8 ° #' "! %$ǂà &$ X X 8 ° U-ÃU67* Pƒr…h‡vtÃhqÃT‡‚…htrÃEˆp‡v‚ÃUr€ƒr…h‡ˆ…rÃShtr ° °8 7KHUPDO &KDUDFWHULVWLFV S S θ-& Uur…€hyÃSr†v†‡hprÃEˆp‡v‚‡‚Ã8h†r Uur…€hyÃSr†v†‡hprÃEˆp‡v‚‡‚Ã6€ivr‡ I‚‡rà  " " %!$ °8X °8X θ-$ 3DFNDJH 2XWOLQHV DQG 2UGHULQJ ,QIRUPDWLRQ 'HYLFH 0DUNLQJ HUQ"$$W 'HYLFH 3DFNDJH ,QIRUPDWLRQ Shvy†Uˆir† 4XDQWLW\ #$ȁv‡† HUQ"$$W 9vrÃhqÀhˆshp‡ˆ…vtƂˆ…prƈiwrp‡Ã‡‚Ãpuht...