switching transistors. 2N2219 Datasheet

2N2219 transistors. Datasheet pdf. Equivalent

2N2219 Datasheet
Recommendation 2N2219 Datasheet
Part 2N2219
Description NPN switching transistors
Feature 2N2219; DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2219; 2N2219A NPN switching transistor.
Manufacture Philips
Datasheet
Download 2N2219 Datasheet





Philips 2N2219
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N2219; 2N2219A
NPN switching transistors
Product specification
Supersedes data of 1997 May 07
File under Discrete Semiconductors, SC04
1997 Sep 03



Philips 2N2219
Philips Semiconductors
NPN switching transistors
Product specification
2N2219; 2N2219A
FEATURES
High current (max. 800 mA)
Low voltage (max. 40 V).
APPLICATIONS
High-speed switching
DC and VHF/UHF amplification, for 2N2219 only.
DESCRIPTION
NPN switching transistor in a TO-39 metal package.
PNP complement: 2N2905 and 2N2905A.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpag1e
2
3
2
MAM317
3
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
2N2219
2N2219A
VCEO
collector-emitter voltage
2N2219
2N2219A
IC collector current (DC)
Ptot total power dissipation
hFE DC current gain
fT transition frequency
2N2219
2N2219A
toff turn-off time
CONDITIONS
MIN.
open emitter
open base
Tamb 25 °C
IC = 10 mA; VCE = 10 V
IC = 20 mA; VCE = 20 V; f = 100 MHz
75
250
300
ICon = 150 mA; IBon = 15 mA; IBoff = 15 mA
MAX. UNIT
60 V
75 V
30 V
40 V
800 mA
800 mW
MHz
MHz
250 ns
1997 Sep 03
2



Philips 2N2219
Philips Semiconductors
NPN switching transistors
Product specification
2N2219; 2N2219A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
2N2219
2N2219A
collector-emitter voltage
2N2219
2N2219A
emitter-base voltage
2N2219
2N2219A
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open base; IC 500 mA
open collector
Tamb 25 °C
Tcase 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
MIN.
MAX.
UNIT
60 V
75 V
30 V
40 V
5V
6V
800 mA
800 mA
200 mA
800 mW
3W
65
+150
°C
200 °C
65
+150
°C
VALUE
190
50
UNIT
K/W
K/W
1997 Sep 03
3





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