RSS140N03

RSS140N03 Transistor Switching (30V, ±14A) RSS140N03 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm) SOP8 (8) 5.0±0.2 (5) 6.0±0.3 3.9±0.15 1.5±0.1 0.15 zApplications Power switching, DC/DC converter. (1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain 1.27 0.4±0.1 0.1 Each lead has same dimensions zStructure Silicon N-channel MOS FET zEquivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗1 Max.1.75 (1) (2) (3) (4) (1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipatino Channel temperature Strage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits 30 20 ±14 ±56 1.6 6.4 2 150 −55 to +150 Unit V V A A A A W °C °C ∗1 ∗1 ∗2 0.5±0.1 (1) (4) 0.2±0.1 1/3 RSS140N03 Transistor zThermal resistance (Ta=25°C) Parameter Channel to ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-a) Limits 62.5 Unit °C / W ...