NTD40N03R

NTD40N03R Power MOSFET 45 Amps, 25 Volts N−Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters Pb−Free Packages are Available http://onsemi.com 45 AMPERES, 25 VOLTS RDS(on) = 12.6 mW (Typ) N−CHANNEL D MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current − Continuous @ TC = 25°C, Chip − Continuous @ TA = 25°C, Limited by Wires − Single Pulse (tp ≤ 10 ms) Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS RqJC PD ID ID ID RqJA PD ID RqJA PD ID TJ, Tstg TL Value 25 ±20 3.0 50 45 32 100 71.4 2.1 9.2 100 1.5 7.8 −55 to 175 260 Unit Vdc Vdc °C/W W A A A °C/W W A °C/W W A °C °C 4 1 2 3 CASE 369AA DPAK (Surface Mount) STYLE 2 1 2 3 CASE 369D DPAK (Straight Lead) STYLE 2 S 4 G MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain YWW T40 N03 4 Drain YWW T40 N03 3 Source 1 Gate 2 Drain 40N03= Device Code Y...