MS2176

www.DataSheet4U.com MS2176 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES W W W . Microsemi . COM The MS2176 is a gold metallized silicon NPN pulse power transistor. The MS2176 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol VCBO VCES VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 65 3.5 21.6 875 +200 -65 to +150 Unit V V V A W °C °C 350 Watts @ 10µ Sec Pulse Width, 10% Duty Cycle 300 Watts @ 250µ Sec Pulse Width 10% Duty Cycle 9.5 dB Min. Gain Refractory Gold Metallization Emitter Ballasting And Low Thermal Resistance For Reliability and Ruggedness Infinite VSWR Capability At Specified Operating Conditions APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 0.2 °C/W UHF Pulsed Applications taS hee t4U .co m PIN CONNECTION 1 2 3 1. Collector 2. Base 4 3. Emitter 4. Base .400 X .400 2LFL (M106) hermetically sealed MS2176 w.D a ww Copyright  2000 MSC1651.PDF 2001-01-04 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 1 www.DataSheet4U.com MS2176 R...