CMOS EEPROM. 28C64A Datasheet

28C64A EEPROM. Datasheet pdf. Equivalent

Part 28C64A
Description 64K (8K x 8) CMOS EEPROM
Feature 28C64A 64K (8K x 8) CMOS EEPROM FEATURES • Fast Read Access Time—150 ns • CMOS Technology for Low P.
Manufacture Microchip Technology
Datasheet
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28C64A
28C64A
64K (8K x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns
• CMOS Technology for Low Power Dissipation
- 30 mA Active
- 100 µA Standby
• Fast Byte Write Time—200 µs or 1 ms
• Data Retention >200 years
• High Endurance - Minimum 100,000 Erase/Write
Cycles
• Automatic Write Operation
- Internal Control Timer
- Auto-Clear Before Write Operation
- On-Chip Address and Data Latches
• Data Polling
• Ready/Busy
• Chip Clear Operation
• Enhanced Data Protection
- VCC Detector
- Pulse Filter
- Write Inhibit
• Electronic Signature for Device Identification
• 5-Volt-Only Operation
• Organized 8Kx8 JEDEC Standard Pinout
- 28-pin Dual-In-Line Package
- 32-pin PLCC Package
- 28-pin Thin Small Outline Package (TSOP)
8x20mm
- 28-pin Very Small Outline Package (VSOP)
8x13.4mm
• Available for Extended Temperature Ranges:
- Commercial: 0˚C to +70˚C
DESCRIPTION
The Microchip Technology Inc. 28C64A is a CMOS 64K non-
volatile electrically Erasable PROM. The 28C64A is
accessed like a static RAM for the read or write cycles without
the need of external components. During a “byte write”, the
address and data are latched internally, freeing the micropro-
cessor address and data bus for other operations. Following
the initiation of write cycle, the device will go to a busy state
and automatically clear and write the latched data using an
internal control timer. To determine when the write cycle is
complete, the user has a choice of monitoring the Ready/
Busy output or using Data polling. The Ready/Busy pin is an
open drain output, which allows easy configuration in wired-
or systems. Alternatively, Data polling allows the user to read
the location last written to when the write operation is com-
plete. CMOS design and processing enables this part to be
used in systems where reduced power consumption and reli-
ability are required. A complete family of packages is offered
to provide the utmost flexibility in applications
PACKAGE TYPE
RDY/BSY
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
•1
2
3
4
5
6 DIP/
7
8
SOIC
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
WE
NC
A8 A6 5
A9 A5 6
A11 A4 7
OE A3 8
A10 A2 9
CE A1 10
I/O7 A0 11
I/O6
NC
I/O0
12
13
I/O5
I/O4
I/O3
PLCC
29 A8
28 A9
27 A11
26 NC
25 OE
24 A10
23 CE
22 I/O7
21 I/O6
• Pin 1 indicator on PLCC on top of package
OE 1
A11 2
A9 3
A8 4
NC 5
WE 6
Vcc 7
RDY/BSY 8
A12 9
A7 10
A6 11
A5 12
A4 13
A3 14
TSOP
28 A10
27 CE
26 I/07
25 I/06
24 I/05
23 I/04
22 I/03
21 Vss
20 I/02
19 I/01
18 I/00
17 A0
16 A1
15 A2
OE
A11
A9
A8
NC
WE
VCC
RDY/BSY
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
VSOP
21 A10
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
14 VSS
13 I/O2
12 I/O1
11 I/O0
10 A0
9 A1
8 A2
BLOCK DIAGRAM
I/O0 I/O7
VSS
VCC
CE
OE
WE
Rdy/
Busy
A0
A12
Data Protection
Circuitry
Chip Enable/
Output Enable
Control Logic
Auto Erase/Write
Timing
Program Voltage
Generation
Data
Poll
Y
L Decoder
a
t
c
h
eX
s Decoder
Input/Output
Buffers
Y Gating
16K bit
Cell Matrix
© 1994 Microchip Technology Inc.
DS11109G-page 1



28C64A
28C64A
1.0 ELECTRICAL CHARACTERISTICS
1.1 MAXIMUM RATINGS*
VCC and input voltages w.r.t. VSS....... -0.6V to + 6.25V
Voltage on OE w.r.t. VSS ..................... -0.6V to +13.5V
Voltage on A9 w.r.t. VSS ...................... -0.6V to +13.5V
Output Voltage w.r.t. VSS.................-0.6V to VCC+0.6V
Storage temperature ...........................-65˚C to +125˚C
Ambient temp. with power applied ........-50˚C to +95˚C
*Notice: Stresses above those listed under “Maximum Ratings”
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operation listings of
this specification is not implied. Exposure to maximum rating con-
ditions for extended periods may affect device reliability.
TABLE 1-1: PIN FUNCTION TABLE
Name
Function
A0 - A12
CE
OE
WE
I/O0 - I/O7
RDY/Busy
VCC
VSS
NC
NU
Address Inputs
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
Ready/Busy
+5V Power Supply
Ground
No Connect; No Internal Connection
Not Used; No External Connection is
Allowed
TABLE 1-2: READ/WRITE OPERATION DC CHARACTERISTIC
VCC = +5V ±10%
Commercial (C): Tamb = 0˚C to +70˚C
Industrial (I): Tamb = -40˚C to +85˚C
Parameter
Status
Symbol Min Max Units
Conditions
Input Voltages
Input Leakage
Input Capacitance
Logic ‘1’
Logic ‘0’
VIH 2.0
VIL -0.1
ILI -10
CIN
Output Voltages
Output Leakage
Logic ‘1’ VOH 2.4
Logic ‘0’
VOL
— ILO -10
Output Capacitance
COUT
Power Supply Current, Active
TTL input
ICC
Power Supply Current, Standby
TTL input ICC(S)TTL
TTL input ICC(S)TTL
CMOS input ICC(S)CMOS
Note 1: AC power supply current above 5MHz: 2mA/MHz.
Note 2: Not 100% tested.
Vcc+1
0.8
10
10
0.45
10
12
30
2
3
100
V
V
µA VIN = -0.1V to Vcc +1
pF VIN = 0V; Tamb = 25˚C;
f = 1 MHz (Note 2)
V IOH = -400 µA
V IOL = 2.1 mA
µA VOUT = -0.1V to Vcc
+0.1V
pF VIN = 0V; Tamb = 25˚C;
f = 1 MHz (Note 2)
mA f = 5 MHz (Note 1)
VCC = 5.5V
mA CE = VIH (0˚C to +70˚C)
mA CE = VIH (-40˚C to +85˚C)
µA CE = VCC-0.3 to Vcc +1
DS11109G-page 2
© 1994 Microchip Technology Inc.





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