28F001BX-T

1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automated Algorithms via On-Chip Write State Machine (WSM) SRAM-Compatible Write Interface Deep Power-Down Mode 0 05 mA ICC Typical 0 8 mA IPP Typical 12 0V g 5% VPP Y High-Performance Read 70 75 ns 90 ns 120 ns 150 ns Maximum Access Time 5 0V g 10% VCC Hardware Data Protection Feature Erase Write Lockout during Power Transitions Advanced Packaging JEDEC Pinouts 32-Pin PDIP 32-Lead PLCC TSOP ETOX TM II Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Extended Temperature Options Y Y Y Y Y Y Y Y Y Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with features that simplify write and allow block erase These devices aid the system designer by combining the functions of several components into one making boot block flash an innovative alternative to EPROM and EEPROM or battery-backed static RAM Many new and existing designs can take advantage of the 28F001BX’s integration of blocked architecture automated electrical reprogramming and standard processor interface The 28F001BX-B and 28F001BX-T are 1 048 576 bit nonvolatile memories organized as 131 072 bytes of 8 bits They are offered in 32-pin plastic DIP 32-...