28F016XD

E n n n n n n 28F016XD 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY n n n n n n n 56-Lead TSOP Type I Package Backwards-Compatible with 28F008SA Command Set 2 µA Typical Deep Power-Down Current 1 mA Typical I CC Active Current in Static Mode 32 Separately-Erasable/Lockable 64-Kbyte Blocks 1 Million Erase Cycles per Block State-of-the-Art 0.6 µm ETOX™ IV Flash Technology 85 ns Access Time (t RAC)  Supports both Standard and FastPage-Mode Accesses Multiplexed Address Bus  RAS# and CAS# Control Inputs No-Glue Interface to Many Memory Controllers SmartVoltage Technology  User-Selectable 3.3V or 5V V CC  User-Selectable 5V or 12V V PP 0.33 MB/sec Write Transfer Rate x16 Architecture Intel’s 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable the design of direct-execute code and mass storage data/file flash memory systems. The 28F016XD’s DRAM-like interface with a multiplexed address bus, flexible VCC and VPP voltages, power saving features, extended cycling, fast program and read performance, symmetrically-blocked architect...