256K x 8 CMOS FLASH MEMORY
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12.0 V ±5% VPP
28F020 2048K (256K X 8) CMOS FLASH MEMORY
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Command Register Architecture for Micr...
Description
E
n n n n n n n
12.0 V ±5% VPP
28F020 2048K (256K X 8) CMOS FLASH MEMORY
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Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX™ Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP
(See Packaging Spec., Order #231369)
Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm 10 µS Typical Byte-Program 4 second Chip-Program 100,000 Erase/Program Cycles High-Performance Read 90 ns Maximum Access Time CMOS Low Power Consumption 10 mA Typical Active Current 50 µA Typical Standby Current 0 Watts Data Retention Power Integrated Program/Erase Stop Timer
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Extended Temperature Options
Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; onboard during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases memory flexibility, while contributing to time and cost savings. The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel’s 28F020 is offered ...
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