28LV64A

28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM FEATURES 2.7V to 3.6V Supply Read Access Time—300 ns CMOS Technology for Low Power Dissipation - 8 mA Active - 50 µA CMOS Standby Current Byte Write Time—3 ms Data Retention >200 years High Endurance - Minimum 100,000 Erase/Write Cycles Automatic Write Operation - Internal Control Timer - Auto-Clear Before Write Operation - On-Chip Address and Data Latches Data Polling Ready/Busy Chip Clear Operation Enhanced Data Protection - VCC Detector - Pulse Filter - Write Inhibit Electronic Signature for Device Identification Organized 8Kx8 JEDEC Standard Pinout - 28-pin Dual-In-Line Package - 32-pin Chip Carrier (Leadless or Plastic) - 28-pin Thin Small Outline Package (TSOP) 8x20mm - 28-pin Very Small Outline Package (VSOP) 8x13.4mm Available for Extended Temperature Ranges: - Commercial: 0˚C to +70˚C - Industrial: -40˚C to +85˚C PACKAGE TYPES RDY/BSY A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3 2 RDY/BSY 1 NU 4 A7 3 A12 32 Vcc 31 WE 18 19 30 NC 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 21 I/O6 14 15 16 17 Pin 1 indicator on PLCC on top of package OE A11 A9 A8 NC WE Vcc RDY/BSY A12 A7 A6 A5 A4 A3 OE A11 A9 A8 NC WE VCC RDY/BSY A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 22 23 24 25 26 27 28 1 2 3 4 ...