2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
M29F002BT M29F002BB, M29F002BNT
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V ±...
Description
M29F002BT M29F002BB, M29F002BNT
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs by Byte typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks
PLCC32 (K) TSOP32 (N) 8 x 20mm
s s
s
s
PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits
32
s
ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
1
PDIP32 (P)
s
UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION – Standby and Automatic Standby
VCC
s
Figure 1. Logic Diagram
s
s
100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – M29F002BT Device Code: B0h – M29F002BNT Device Code: B0h – M29F002BB Device Code: 34h
G RP A0-A17 W E
18
8 DQ0-DQ7
s
s
M29F002BT M29F002BB M29F002BNT
VSS
AI02957
October 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/22
M29F002BT, M29F002BB, M29F002BNT
Figure 2A. PLCC Connections Figure 2B. TSOP Connections
1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7
9
M29F002BT M29F002BB
A11 A9 A8 A13 A14 A17 W VCC RP A16...
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