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29F010 Dataheets PDF



Part Number 29F010
Manufacturers Advanced Micro Devices
Logo Advanced Micro Devices
Description 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
Datasheet 29F010 Datasheet29F010 Datasheet (PDF)

FINAL Am29F010 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements s High performance — 45 ns maximum access time s Low power consumption — 30 mA max active read current — 50 mA max program/erase current — <25 µA typical standby current s Flexible sector architecture — Eight uniform sectors — Any combination of secto.

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FINAL Am29F010 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements s High performance — 45 ns maximum access time s Low power consumption — 30 mA max active read current — 50 mA max program/erase current — <25 µA typical standby current s Flexible sector architecture — Eight uniform sectors — Any combination of sectors can be erased — Supports full chip erase s Sector protection — Hardware-based feature that disables/reenables program and erase operations in any combination of sectors — Sector protection/unprotection can be implemented using standard PROM programming equipment s Embedded Algorithms — Embedded Erase algorithm automatically pre-programs and erases the chip or any combination of designated sector — Embedded Program algorithm automatically programs and verifies data at specified address s Minimum 100,000 program/erase cycles guaranteed s Package options — 32-pin PLCC — 32-pin TSOP — 32-pin PDIP s Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection s Data# Polling and Toggle Bits — Provides a software method of detecting program or erase cycle completion Publication# 16736 Rev: G Amendment/+2 Issue Date: March 1998 GENERAL DESCRIPTION The Am29F010 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes. The Am29F010 is offered in 32-pin PLCC, TSOP, and PDIP packages. The bytewide data appears on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers. The standard device offers access times of 45, 55, 70, 90, and 120 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE) controls. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This invokes the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cel.


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