29F800

PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES 1,048,576 x 8/524,288 x 16 switchable Single power supply operation - 5.0V only operation for read, erase and program operation Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 0.2uA typical standby current Command register architecture - Byte/word Programming (7us/12us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15) Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability. - Automatically program and verify data at specified address Erase suspend/Erase Resume - Suspends sector erase operation to read data from, or program data to, another sector that is not being erased, then resumes the erase. Status Reply - Data polling & Toggle bit for detection of program and erase operation completion. Ready/Busy pin (RY/BY) - Provides a hardware method of detecting program or erase operation completion. Sector protection - Sector protect/chip unprotect for 5V/12V system. - Hardware method to disable any combination of sectors from program or erase operations - Tempory sector unprotect allows code changes in previously locked sectors. 100,000 minimum erase/program cycles Latch-up protected to 100mA from -1V to VCC+1V Boot Code Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector Low VCC write inhibit is equal to or less than 3...