29W040

M29W040 4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W040 is replaced by the M29W040B 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical – Chip: 2.5 sec typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Data Polling and Toggle bits Protocol for P/E.C. Status MEMORY ERASE in BLOCKS – 8 Uniform Blocks of 64 KBytes each – Block Protection – Multiblock Erase ERASE SUSPEND and RESUME MODES LOW POWER CONSUMPTION – Read mode: 8mA typical (at 12MHz) – Stand-by mode: 20µA typical – Automatic Stand-by mode POWER DOWN SOFTWARE COMMAND – Power-down mode: 1µA typical 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: E3h Table 1. Signal Names A0-A18 DQ0-DQ7 E G W VCC VSS Address Inputs Data Input / Outputs Chip Enable Output Enable Write Enable Supply Voltage Ground PLCC32 (K) TSOP32 (N) 8 x 20mm TSOP32 (NZ) 8 x 14mm Figure 1. Logic Diagram VCC 19 A0-A18 8 DQ0-DQ7 W E G M29W040 VSS AI02074 November 1999 This is information on a product still in productionbut not recommended for new designs. 1/31 M29W040 Figure 2A. LCC Pin Connections Figure 2B. TSOP Pin Connections 1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7 9 M29W040 25 17 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 AI02075 A11 A9 A8 A13 ...