2EL3

2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright © 1998, Power Innovations Limited, UK AUGUST 1998 TELECOMMUNICATION SYSTEM PRIMARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V(BR) DEVICE MINIMUM V 2EL2 2EL3 2EL4 ±245 V(BO) MINIMUM V ±265 ±200 ±215 V(BO) MAXIMUM V ±400 ±265 ±265 CELL PACKAGE (SIDE VIEW) T(A) R(B) MD4XANA q Rated for International Surge Wave Shapes ITU-T K28 DEVICE (10/700) ITSP A 2EL2 2EL3 2EL4 ±125 ±125 ±125 GR-974-CORE (10/1000) ITSP A ±100 ±100 ±100 device symbol T SD4XAA R Terminals T and R correspond to the alternative line designators of A and B q q Gas Discharge Tube (GDT) Replacement Planar Passivated Junctions in a Protected Cell Construction Low Off-State Current Extended Service Life Soldered Copper Electrodes High Current Capability Cell Construction Short Circuits Under Excessive Current Conditions q description These devices are primary protector components for semiconductor arrester assemblies intended to meet the generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93). To conform to the specified environmental requirements, the 2ELx must be installed in a housing which maintains a stable microclimate during these tests (e.g. FIGURE I.1/K28). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises ...