DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N1711 NPN medium power transistor
Product specification Supe...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N1711
NPN medium power
transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28
Philips Semiconductors
Product specification
NPN medium power
transistor
FEATURES High current (max. 500 mA) Low voltage (max. 50 V). APPLICATIONS DC and wideband amplifiers. DESCRIPTION
NPN medium power
transistor in a TO-39 metal package.
1 handbook, halfpage 2
2N1711
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
3 2
3
MAM317
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 150 mA; VCE = 10 V IC = 50 mA; VCE = 10 V; f = 100 MHz open base CONDITIONS open emitter − − − − 100 70 MIN. MAX. 75 50 1 0.8 300 − MHz V V A W UNIT
1997 May 28
2
Philips Semiconductors
Product specification
NPN medium power
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb ≤ 25 °C Tcase ≤ 100 °C Tcase ≤ 25 °C Tstg Tj Tamb storage temperature junction temperature operating ambient temperature CONDITIONS ...