2N1711

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor FEATURES High current (max. 500 mA) Low voltage (max. 50 V). APPLICATIONS DC and wideband amplifiers. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 2N1711 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 150 mA; VCE = 10 V IC = 50 mA; VCE = 10 V; f = 100 MHz open base CONDITIONS open emitter − − − − 100 70 MIN. MAX. 75 50 1 0.8 300 − MHz V V A W UNIT 1997 May 28 2 Philips Semiconductors Product specification NPN medium power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb ≤ 25 °C Tcase ≤ 100 °C Tcase ≤ 25 °C Tstg Tj Tamb storage temperature junction temperature operating ambient temperature CONDITIONS ...