2N1613 2N1711
SWITCHES AND UNIVERSAL AMPLIFIERS
DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN trans...
2N1613 2N1711
SWITCHES AND UNIVERSAL AMPLIFIERS
DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial
NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Products approved to CECC 50002-104 available on request.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CER V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (R BE ≤ 10 Ω ) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 75 50 7 500 0.8 3 1.7 – 65 to 200 Unit V V V mA W W W °C 1/5
T s t g, T j January 1989
2N1613-2N1711
THERMAL DATA
R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 58 219 °C/W °C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol I CBO I E BO V ( BR)
CBO
Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0)
Test Conditions V CB = 60 V V CB = 60 V V EB = 5 V T am b = 150 °C for 2N 16 13 for 2N 17 11
Min.
Typ.
Max. 10 10 10 5
Unit nA µA nA nA V
Collector-base Breakdown I C = 0.1 mA Voltage Collector-emitter Breakdown Voltage (R B E ≤ 10 Ω) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Satur...