2N1893S

Data Sheet No. 2N1893S Type 2N1893S Geometry 4500 Polarity NPN Qual Level: JAN - JANTXV Features: General-purpose low-power NPN silicon transistor. Housed in TO-39 case. Also available in chip form using the 4500 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/182 which Semicoa meets in all cases. Generic Part Number: 2N1893 REF: MIL-PRF-19500/182 TO-39 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter voltage Collector-Base Voltage Emitter-Base Voltage Collector - Emitter Voltage, RBE = 10 Ohms Collector Current, Continuous Power Dissipation, TA = 25 C Derate above 25 C Power Dissipation, TC = 25 C Derate above 25 C Operating Junction Temperature Storage Temperature o o o o Symbol VCEO VCBO VEBO VCER IC PT Rating 80 120 7.0 100 500 0.8 4.57 Unit V V V V mA mW mW/ C mW mW/ C o o o o PT 3.0 17.2 TJ TSTG -55 to +200 -55 to +200 C C Data Sheet No. 2N1893S Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 µA, pulsed Collector-Emitter Breakdown Voltage IC = 30 mA, pulsed Emitter-Base Breakdown Voltage IE = 10 µA, pulsed Collector-Base Cutoff Current VCB = 90 V Collector-Base Cutoff Current VCB = 90 V, TA = 150oC Emitter-Base Cutoff Current VEB = 6 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO1 ICBO2 IEBO Min 120 80 7.0 ------- Max ------10 15 10 Unit V V --nA µA nA ON Characteristics Forward Current Transfer Ratio IC = 0.1 mA, VCE = 1...