2N2219A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2219; 2N2219A NPN switching transistors Product specification Supersedes data of 1997 May 07 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN switching transistors FEATURES High current (max. 800 mA) Low voltage (max. 40 V). APPLICATIONS High-speed switching DC and VHF/UHF amplification, for 2N2219 only. 1 handbook, halfpage 2 2N2219; 2N2219A PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 DESCRIPTION NPN switching transistor in a TO-39 metal package. PNP complement: 2N2905 and 2N2905A. 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N2219 2N2219A VCEO collector-emitter voltage 2N2219 2N2219A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency 2N2219 2N2219A toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA Tamb ≤ 25 °C IC = 10 mA; VCE = 10 V IC = 20 mA; VCE = 20 V; f = 100 MHz 250 300 − − − 250 MHz MHz ns open base − − − − 75 30 40 800 800 − V V mA mW open emitter − − 60 75 V V CONDITIONS MIN. MAX. UNIT 1997 Sep 03 2 Philips Semiconductors Product specification NPN switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO 2N2219 2N2219A VCEO collector-emitter voltage 2N2219 2N2219A VEBO emitter-base voltage 2N2219 2N2219A IC ...